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MBR3060PT-E3-45 PDF预览

MBR3060PT-E3-45

更新时间: 2024-01-16 07:26:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 87K
描述
Dual Common-Cathode Schottky Rectifier

MBR3060PT-E3-45 数据手册

 浏览型号MBR3060PT-E3-45的Datasheet PDF文件第2页浏览型号MBR3060PT-E3-45的Datasheet PDF文件第3页浏览型号MBR3060PT-E3-45的Datasheet PDF文件第4页 
MBR3035PT thru MBR3060PT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common-Cathode Schottky Rectifier  
FEATURES  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
• Solder dip 275 °C max., 10 s, per JESD 22-B106  
3
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
2
1
TO-247AD (TO-3P)  
TYPICAL APPLICATIONS  
PIN 2  
CASE  
PIN 1  
PIN 3  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters or polarity protection application.  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-247AD (TO-3P)  
IF(AV)  
VRRM  
IFSM  
30 A  
Molding compound meets UL 94V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
35 V, 60 V  
200 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
VF  
0.60 V, 0.65 V  
150 °C  
TJ max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT  
Maximum repetitive peak reverse voltage  
Maximum working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
V
A
Maximum average forward rectified current (Fig.1)  
IF(AV)  
30  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
200  
A
A
Peak repetitive reverse surge current at tp = 2 µs, 1 kHz  
per diode  
(1)  
IRRM  
2.0  
1.0  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/μs  
°C  
- 65 to + 150  
- 65 to + 175  
TSTG  
°C  
Note  
(1)  
2.0 μs pulse width, f = 1.0 kHz  
Revision: 20-Nov-12  
Document Number: 88676  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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