MBR2545CT-Y thru MBR25150CT-Y
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-220AB
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
MBR
2545
CT-Y
MBR
2560
CT-Y
MBR
25100
CT-Y
MBR
25150
CT-Y
PARAMETER
SYMBOL
UNIT
MBR25
45CT
MBR25
60CT
MBR25
100CT
MBR25
150CT
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
45
31
45
60
42
60
100
70
150
105
150
V
V
V
A
Maximum DC blocking voltage
100
Maximum average forward rectified current
IF(AV)
25
25
Peak repetitive forward current
(Rated VR, square wave, 20KHz)
IFRM
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
IRRM
200
A
A
Peak repetitive reverse surge current (Note 1)
0.5
1
Maximum instantaneous forward voltage (Note 2)
IF=12.5A, TJ=25℃
-
0.75
0.65
-
0.85
0.75
0.92
0.88
0.1
0.95
0.92
1.02
0.98
0.1
IF=12.5A, TJ=125℃
VF
V
-
IF=25A, TJ=25℃
0.82
0.73
0.2
IF=25A, TJ=125℃
-
0.2
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
IR
mA
15
10
7.5
5
Voltage rate of change (Rated VR)
Typical thermal resistance
10000
1
dV/dt
RθJC
TJ
V/μs
OC/W
OC
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
OC
TSTG
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Document Number: DS_D1405044
Version: A14