Datasheet > MBR2060FCT

MBR2060FCT

更新时间： 2024-01-27 14:54:18

品牌	Logo	应用领域
强茂 - PANJIT		肖特基二极管瞄准线功效局域网
页数	文件大小	规格书
2页	90K
描述
20 AMPERES SCHOTTKY BARRIER RECTIFIERS

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技术参数
数据手册

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MBR2060FCT 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

MBR2060FCT 数据手册

MBR2040FCT~MBR20200FCT

20 AMPERES SCHOTTKY BARRIER RECTIFIERS

20 Amperes

VOLTAGE

40 to 200 Volts

CURRENT

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency.

• High current capability

• Guardring for overvlotage protection

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• In compliance with EU RoHS 2002/95/EC directives

MECHANICALDATA

• Case: ITO-220AB molded plastic

.027(.67)

.022(.57)

• Terminals: solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Mounting Position: Any

• Weight: 0.055 ounces, 1.5615 grams.

MAXIMUMRATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

MBR2040FCT MBR2045FCT MBR2050FCT MBR2060FCT MBR2080FCT MBR2090FCT MBR20100FCT MBR20150FCT MBR20200FCT

PARAMETER

SYMBOL

V_{R R M}

UNITS

Maximum Recurrent Peak Reverse Voltage

31.5

100

150

105

150

200

140

200

Maximum RMS Voltage

V_{R M}

Maximum DC Blocking Voltage

V^DC

100

Maximum Average Forward Current (See

fig.1)

I_F(AV)

Peak Forward Surge Current :8.3ms single

half sine-wave superimposed on rated

load(JEDEC method)

I_FSM

V_F

I_R

200

Maximum Forward Voltage at 10A, per leg

0.7

0.75

0.8

0.9

Maximum DC Reverse Current T_J=25 ^OC

0.05

at Rated DC Blocking Voltage T_J=125^O

Typical Thermal Resistance

^OC

R_θJC

Operating and Storage Junction

Temperature Range

^OC

-55 to

+ 150

T_J,T_STG

-65 to +175

Notes :

Both Bonding and Chip structure are available.

PAGE . 1

STAD-AUG.12.2009

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