Datasheet > MBR2060L-F-CT-J

MBR2060L-F-CT-J

更新时间： 2024-10-01 01:25:31

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海德 - HDSEMI		/
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3页	1343K
描述
TO-220 Plastic-Encapsulate Diodes

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数据手册

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MBR2060L-F-CT-J 数据手册

MBR2060L(F)CT

HD TO87

TO-220 Plastic-Encapsulate Diodes

Schottky Rectifier

Features

●I

20A

ITO- 220AB

TO- 220AB

60V

●VRRM

●High surge current capability

●

Low Vf

Applications

●Rectifier

Marking

● MBR2060L(F)CT

PIN 1

PIN 3

PIN 2

CASE

Item

Symbol

Unit

Test Conditions

MBR2060L(F)CT

Repetitive Peak Reverse Voltage

Average Rectified Output Current

V_RRM

I_o

20.0

60HZ Half-sine wave, Resistance

load, Tc(Fig.1)

Surge(Non-repetitive)Forward

Current

I_FSM

150

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

Junction Temperature

Storage Temperature

T_J

℃

-55~+150

T_STG

-55 ~ +150

Electrical Characteristics (T =25℃ Unless otherwise specified）

MBR2060L(F)CT

Item

Symbol

Unit

Test Condition

V_F

I_F=10.0A

Peak Forward Voltage

0.6

I_RRM1

I_RRM2

T =25℃

0.1

Peak Reverse Current

V_RM=V_RRM

T =125℃

1.5

Thermal

Resistance(Typical)

3.5¹⁾

R_θ

℃/W

Between junction and case

J-C

Notes:

Thermal resistance from junction to case per leg with heat-sink size of 2"×3"×0.25" AL-plate

igh Diode Semiconductor

12 3

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