Datasheet > MBR2045

MBR2045

更新时间： 2023-12-06 20:01:16

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管
页数	文件大小	规格书
2页	1053K
描述
肖特基二极管

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数据手册

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MBR2045 数据手册

MBR2040-MBR20200

Schottky Barrier Rectifiers

VOLTAGE RANGE: 40 - 200 V

CURRENT: 20 A

TO-220AC

Features

4.5± 0.2

High surge capacity.

10.2± 0.2

1.4± 0.2

For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications.

φ 3.8± 0.15

111

Metal silicon junction, majority carrier conduction.

High current capacity, low forward voltage drop.

Guard ring for over voltage protection.

2.6± 0.2

Mechanical Data

Case:JEDEC TO-220AC,molded plastic body

0.9± 0.1

Polarity: As marked

Position: Any

0.5± 0.1

5.0± 0.1

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

ambient temperature unless otherwise specified.

Ratings at 25

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

MBR

2040

MBR MBR MBR MBR MBR MBR MBR

2045 2050 2060 2080 20100 20150 20200

Symbol

UNITS

Parameter

Maximum recurrent peak reverse voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100 150

70 105

200

140

200

Maximum DC blocking voltage

100 150

Maximum average forw ard total device

m rectified current @T_C= 120°C

I_F(AV)

Peak forw ard surge current 8.3ms single half

I_FSM

200

sine-w ave superimposed on rated load

Maximum forw ard

voltage

0.63

0.84

0.75

V_F

(IF=20A,TC=25

)

(Note 1)

Maximum reverse current

@T_C=25

0.1

I_R

m A

at rated DC blocking voltage

@T_C=100

Maximum thermal resistance (Note2)

Operating junction temperature range

Storage temperature range

R_θJC

T_J

3.0

- 55 ---- + 150

T_STG

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

2. Thermal resistance from junction to case.

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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