Datasheet > MBR2045C_11

MBR2045C_11

更新时间： 2024-09-28 12:01:35

品牌	Logo	应用领域
BCDSEMI		功效
页数	文件大小	规格书
11页	903K
描述
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER

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MBR2045C_11 数据手册

Data Sheet

HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER

MBR2045C

General Description

Main Product Characteristics

High efficiency dual Schottky rectifier suited for

switch mode power supplies and other power convert-

ers. This device is intended for use in medium voltage

operation, and particularly, in high frequency circuits

where low switching losses and low noise are required.

I_F(AV)

V_RRM

T_J

2×10A

45V

150^oC

0.57V

V_F(max)

MBR2045C is available in TO-220-3, TO-220-3 (2)

and TO-220F-3 packages.

Mechanical Characteristics

Features

Low Forward Voltage: 0.57V @ 125^oC

Low Power Loss/High Efficiency

Case: Epoxy, Molded

Epoxy Meets UL 94V-0 @ 0.125in.

Weight (Approximately):

150 C Operating Junction Temperature

1.9Grams (TO-220-3, TO-220-3 (2) and

TO-220F-3)

20A Total (10A Each Diode Leg)

Guard-ring for Stress Protection

High Surge Capacity

Finish: All External Surfaces Corrosion Resistant

and Terminal

Pb-free Package

Leads are Readily Solderable

Lead Temperature for Soldering Purposes:

260 C Maximum for 10 Seconds

Applications

Power Supply Output Rectification

Power Management

Instrumentation

TO-220F-3

TO-220-3 (Optional)

TO-220-3(2)

Figure 1. Package Types of MBR2045C

Mar. 2011 Rev. 1. 5

BCD Semiconductor Manufacturing Limited

12 3 4 5 6 7...11

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