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MBR1545CT PDF预览

MBR1545CT

更新时间: 2024-09-27 22:46:23
品牌 Logo 应用领域
TSC 二极管瞄准线功效局域网
页数 文件大小 规格书
3页 290K
描述
SCHOTTKY BARRIER RECTIFIER

MBR1545CT 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.11Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.84 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3湿度敏感等级:1
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:7.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:45 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Pure Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

MBR1545CT 数据手册

 浏览型号MBR1545CT的Datasheet PDF文件第2页浏览型号MBR1545CT的Datasheet PDF文件第3页 
东莞市华远电子有限公  
DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.  
TEL 86-769-5335378 86-769-5305266  
FEX 86-769-5316189  
TO-220 Plastic-Encapsulate Transistors  
MBR1530CT-MBR1560CT  
TO220  
SCHOTTKY BARRIER RECTIFIER  
FEATURES  
· Schottky Barrier Chip  
1.ANODE  
· Guard Ring Die Construction for Transient Protection  
· Low Power Loss, High Efficiency  
2.CATHODE  
· High Surge Capability  
1 2 3  
· High Current Capability and Low Forward Voltage Drop  
· For Use in Low Voltage, High Frequency Inverters, Free  
Wheeling, and Polarity Protection Applications  
3.ANODE  
1
2
3
2
ELECTRICAL CHARACTERISTICSTamb=25℃  
unless otherwise specified)  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
Characteristic  
Symbol  
Unit  
1530CT  
1535CT  
1540CT  
1545CT  
1550CT  
1560CT  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
30  
21  
35  
40  
28  
45  
50  
35  
60  
42  
V
PMS Reverse Voltage  
VR(RMS)  
IO  
24.5  
31.5  
V
A
Average Rectified Output Current  
15  
(Note 1)  
@ TC=105℃  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
IFSM  
150  
A
rated load  
(JEDEC Method)  
Forward Voltage Drop @ IF=7.5A, TC=125℃  
0.57  
0.65  
VFM  
V
@ IF=7.5A, TC= 25℃  
0.70  
0.1  
0.75  
1.0  
Peak Reverse Current  
@ TC= 25℃  
@ TC=125℃  
IRM  
mA  
at Rated DC Blocking Voltage  
15  
50  
Typical Junction Capacitance (Note 2)  
Operating and Storage Temperature Range  
Cj  
300  
-65 to +150  
pF  
Tj,TSTG  
Notes: 1. Thermal resistance junction to case mounted heatsink.  
2. Measured at 1.OMHz and applied reverse voltage of 4.0V D  

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