MB358W-BP-HF

更新时间： 2024-09-24 13:11:11

品牌	Logo	应用领域
美微科 - MCC		整流二极管桥式整流二极管
页数	文件大小	规格书
2页	88K
描述
Bridge Rectifier Diode

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中文翻译

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技术参数
数据手册

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MB358W-BP-HF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
风险等级：	5.73	二极管类型：	BRIDGE RECTIFIER DIODE
湿度敏感等级：	1	Base Number Matches：	1

MB358W-BP-HF 数据手册

M C C

MB3505

THRU

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MB3510

Features

35 Amp Single Phase

Bridge Rectifier

Mounting Hole For #8 Screw

High Conductivity Metal Case

Any Mounting Position

50 to 1000 Volts

Surge Rating Of 400 Amps

MB-35

Maximum Ratings

Operating Temperature: -55°C to +125°C

Storage Temperature: -55°C to +150°C

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak Reverse

Voltage

50V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

50V

MB3505

MB351

MB352

MB354

MB356

MB358

MB3510

MB3505

MB351

MB352

MB354

MB356

MB358

MB3510

35V

70V

100V

200V

400V

600V

800V

1000v

100V

140V

280V

420V

560V

700V

200V

400V

600V

800V

1000v

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

35.0A

T_C= 55°C

Peak Forward Surge

Current

I_FSM

400A

8.3ms, half sine

Maximum Forward

Voltage Drop Per

Element

V_F

1.2V

I_FM= 17.5A per

element;

DIMENSIONS

T_J= 25°C

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

INCHES

MIN

1.115

.427

.428

.688

.618

.193

.618

.530

DIM

MAX

1.135

.447

.468

.730

.658

---

MIN

MAX

28.83

11.35

11.89

18.50

16.71

---

NOTE

I_R

10mA

1mA

T_J= 25°C

T_J= 125°C

28.33

10.85

10.87

17.48

15.70

4.90

*Pulse test: Pulse width 300 msec, Duty cycle 1%

.658

.570

15.70

13.46

16.71

14.48

www.mccsemi.com

中文翻译

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