Datasheet > MB2S

MB2S

更新时间： 2023-12-06 20:03:17

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1576K
描述
MBS

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中文翻译

获取价格

数据手册

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MB2S 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTDD

MBS Plastic-Encapsulate Bridge Rectifier

General Purpose Bridge Rectifier

MB05S THRU MB10S

Features

MBS

●I_F(AV)

●VRRM

50V-1000V

●High surge current capability

●

Glass passivated chip

Applications

●

General purpose 1 phase Bridge

rectifier applications

Marking

● MBXXS

X From 05 To 10

05S 1S 2S 4S

Symbol Unit

Item

Conditions

6S 8S 10S

Repetitive Peak Reverse

Voltage

V_RRM

100 200 400 600 800 1000

140 280 420 560 700

Maximum

Voltage

RMS

Average Rectified Output

Current

1.0

I_O

60Hz sine wave,

R-load, Ta=40℃

Surge(Non-

repetitive)Forward Current

half

60H_Z

sine wave, 1 cycle, T_j=25℃

I_FSM

A²S

I²t

Current Squared Time

1ms≤t<8.3ms Tj=25℃，Rating of per diode

5.08

Operation Junction and

Storage Temperature Range

-55 ~+150

T_J,T_stg

℃

Electrical Characteristics（T_a=25℃ Unless otherwise specified）

Max

Symbol Unit

Test Condition

Item

I_FM=1.0A, Pulse measurement, Rating of per diode

V_FM

1.0

Peak Forward Voltage

Peak Reverse Current

_RM=V_RRM, Pulse measurement, Rating of per diode

Between junction and ambient, On alumina substrate

Between junction and ambient, On glass-epoxi substrate

I_RRM

μA

J-A

J-L

℃/W

134

Thermal Resistance

Between junction and lead

www.jscj-elec.com

Rev. - 1.1

12 3 4

中文翻译

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