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MB1M

更新时间: 2023-12-06 20:00:25
品牌 Logo 应用领域
鲁光 - LGE 普通整流桥
页数 文件大小 规格书
2页 1160K
描述
普通整流桥

MB1M 数据手册

 浏览型号MB1M的Datasheet PDF文件第2页 
MB2M-MB10M  
SILICON BRIDGE RECTIFIERS  
MBM  
Dim  
A
B
C
E
F
Min  
Max  
4.80  
3.80  
2.65  
0.35  
5.20  
0.80  
6.30  
2.70  
5.90  
A
4.40  
FEATURES  
+
-
3.40  
2.35  
~
~
z
z
z
z
z
z
Glass passivated chip junctions  
0.15  
L
4.60  
High surge overload rating: 35A peak  
I
0.50  
I
E
J
5.70  
Saves space on printed circuit boards  
K
L
2.30  
5.40  
K
J
Plastic material has U/L flammability classification94V-O  
All Dimensions in mm  
This series is UL recognized under Component Index, file number E239431  
High temperature soldering guaranteed: 260°C/10 seconds at 5 lbs. (2.3kg) tension  
MECHANICAL DATA  
z
Case: Molded plastic body over passivated junctions  
z
Terminals: Plated leads solderable per MIL-STD-750, Method 2026  
Maximum Ratings (@TA = 25°C unless otherwise specified)  
Characteristic  
Symbol  
MB2M  
MB4M  
MB6M  
MB8M  
MB10M  
UNITS  
Peak Repetitive Reverse Voltage  
RMS Reverse Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
0.51)  
0.82)  
800  
560  
800  
1000  
700  
V
V
V
DC Blocking Voltage  
1000  
Maximum average forward Output current  
IF(AV)  
A
@TA=25℃  
Peak forward surge current 8.3ms single half-sine-  
IFSM  
35  
A
wave superimposed on rated load  
Current squared time t < 8.3ms , Ta = 25  
I2t  
5.1  
A2s  
Thermal Characteristics  
Characteristic  
Symbol  
MB2M  
MB4M  
MB6M  
MB8M  
MB10M  
UNITS  
Typical junction capacitance per leg (NOTE 3)  
CJ  
13  
p F  
Typical thermal resistance per leg  
(NOTE 1)  
(NOTE 2)  
R ΘJA  
R θ JL  
TJ  
85  
/W  
20  
Operating junction temperature range  
Storage temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TSTG  
Electrical Characteristics (@TA = 25°C unless otherwise specified)  
Characteristic  
Symbol  
MB2M  
MB4M  
MB6M  
MB8M  
MB10M  
UNITS  
Maximum instantaneous forward voltage at 0.4 A  
VF  
1.0  
V
Maximum reverse current @TA=25℃  
5.0  
IR  
μ A  
at rated DC blocking voltage @TA=125℃  
100  
NOTES: (1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads  
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20mm) mounted on 0.05 x 0.05" (1.3 x 1.3mm) solder pad  
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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