Datasheet > MB1S_09

MB1S_09

更新时间： 2022-11-18 01:11:57

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	168K
描述
Bridge Rectifiers

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MB1S_09 数据手册

May 2009

MB1S - MB8S

Bridge Rectifiers

Features

• Low leakage

• Surge overload rating : 35 amperes peak.

• Ideal for printed circuit board.

• UL certified, UL #E111753 and E326243.

SOIC-4

Polarity symbols molded

or marking on body

Absolute Maximum Ratings * T = 25°C unless otherwise noted

Value

Symbol

Parameter

Units

100

200

140

200

600

420

600

800

560

800

Maximum Repetitive Reverse Voltage

Maximum RMS Bridge Input Voltage

400

280

400

0.5

RRM

RMS

DC Reverse Voltage (Rated V )

100

Average Rectified Forward Current @ T = 50°C

F(AV)

Non-Repetitive Peak Forward Surge Current

8.3 ms Single Half-Sine-Wave

FSM

Storage Temperature Range

-55 to +150

°C

STG

Operating Junction Temperature

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

Symbol

Parameter

Value

1.4

Units

Power Dissipation

Thermal Resistance, Junction to Ambient,* per leg

Thermal Resistance, Junction to Lead,* per leg

°C/W

θJA

θJL

* Device mounted on PCB with 0.5-0.5" (13x13 mm) lead length.

Electrical Characteristics T = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Forward Voltage, per bridge @ 0.5 A

1.0

Reverse Current, per leg @ Rated V

T = 25°C

T = 125°C

5.0

0.5

µA

I t rating for fusing

t < 8.3 ms

5.0

A s

Total Capacitance, per leg V = 4.0V, f = 1.0MHz

MB1S - MB8S Rev. D1

www.fairchildsemi.com

12 3

下载PDF

与MB1S_09相关器件

型号	品牌	描述	获取价格	数据表
MB1S_15	CTC	GLASS PASSIVATED BRIDGE RECTIFIERS	获取价格
MB1S_NL	FAIRCHILD	Bridge Rectifier Diode, 1 Phase, 0.5A, 100V V(RRM), Silicon, SOIC-4	获取价格
MB1S~MB10S	SEMIPOWER	Bridge Rectifiers	获取价格
MB1S~MB10S	FOSHAN	MBS	获取价格
MB1S-05~MB10S-05	SEMIPOWER	Bridge Rectifiers	获取价格
MB1S-05~MB10S-05	FOSHAN	MBS	获取价格