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MAX2601_08

更新时间： 2022-12-20 07:39:17
品牌 Logo 应用领域
美信 - MAXIM 晶体晶体管
页数 文件大小 规格书
6页 84K
描述
3.6V, 1W RF Power Transistors for 900MHz Applications

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MAX2601_08 数据手册

 浏览型号MAX2601_08的Datasheet PDF文件第1页浏览型号MAX2601_08的Datasheet PDF文件第3页浏览型号MAX2601_08的Datasheet PDF文件第4页浏览型号MAX2601_08的Datasheet PDF文件第5页浏览型号MAX2601_08的Datasheet PDF文件第6页 
3.6V, 1W RF Power Transistors  
for 900MHz Applications  
ABSOLUTE MAXIMUM RATINGS  
Collector-Emitter Voltage, Shorted Base (V  
)....................17V  
Operating Temperature Range ...........................-40°C to +85°C  
Storage Temperature Range.............................-65°C to +165°C  
Junction Temperature......................................................+150°C  
Lead Temperature (soldering, 10s) .................................+300°C  
CES  
Emitter Base Reverse Voltage (V  
)...................................2.3V  
EBO  
BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V  
Average Collector Current (I )........................................1200mA  
C
Continuous Power Dissipation (T = +70°C)  
A
SOIC (derate 80mW/°C above +70°C) (Note 1) .............6.4W  
Note 1: Backside slug must be properly soldered to ground plane (see Slug Layout Techniques section).  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional  
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to  
absolute maximum rating conditions for extended periods may affect device reliability.  
DC ELECTRICAL CHARACTERISTICS  
(T = T  
A
to T  
, unless otherwise noted.)  
MAX  
MIN  
PARAMETER  
SYMBOL  
BV  
CONDITIONS  
Open base  
Shorted base  
MIN  
15  
TYP  
MAX  
UNITS  
CEO  
Collector-Emitter Breakdown  
Voltage  
I
I
< 100µA  
V
C
BV  
15  
CES  
1/MAX602  
Collector-Emitter Sustaining  
Voltage  
LV  
BV  
= 200mA  
5.0  
V
V
CEO  
C
Collector-Base Breakdown  
Voltage  
I
I
< 100µA, emitter open  
15  
CBO  
C
DC Current Gain  
h
FE  
= 250mA, V = 3V  
100  
C
CE  
Collector Cutoff Current  
Output Capacitance  
I
V
CE  
V
CB  
= 6V, V = 0V  
0.05  
9.6  
1.5  
µA  
pF  
CES  
BE  
C
= 3V, I = 0mA, f = 1MHz  
E
OB  
AC ELECTRICAL CHARACTERISTICS  
(Test Circuit of Figure 1, V  
erwise noted.)  
= 3.6V, V = 0.750V, Z  
BB  
= Z  
= 50Ω, P  
= 30dBm, f = 836MHz, T = +25°C, unless oth-  
OUT A  
CC  
LOAD  
SOURCE  
PARAMETER  
Frequency Range  
Base Current  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
GHz  
mA  
f
(Note 2)  
DC  
1
I
B
4.2  
-43  
-42  
11.6  
58  
V
V
P
= 3.6V, P  
= 3.0V, P  
= 30dBm  
= 29dBm  
dBc  
CC  
OUT  
OUT  
Harmonics  
2fo, 3fo  
CC  
Power Gain  
= 30dBm  
dB  
%
OUT  
η
Collector Efficiency  
No modulation  
Stability under Continuous  
Load Mismatch Conditions  
V
SWR  
V
CC  
= 5.5V, all angles (Note 3)  
8:1  
IM3  
IM5  
NF  
-16  
-25  
3.3  
P
= +30dBm total power, f1 = 835MHz,  
OUT  
Two-Tone IMR  
dBc  
dB  
f2 = 836MHz  
Noise Figure  
V
BB  
= 0.9V  
Note 2: Guaranteed by design.  
Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc; b) no parametric  
degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation  
capability is observed.  
2
_______________________________________________________________________________________  
123456

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