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MAT04AY/883C PDF预览

MAT04AY/883C

更新时间: 2024-01-25 09:52:12
品牌 Logo 应用领域
亚德诺 - ADI 放大器晶体管
页数 文件大小 规格书
12页 849K
描述
TRANSISTOR 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CERDIP-14, BIP General Purpose Small Signal

MAT04AY/883C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:CERDIP-14
针数:14Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.75
其他特性:LOW NOISE最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:40 V配置:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
最小直流电流增益 (hFE):400JESD-30 代码:R-GDIP-T14
JESD-609代码:e0元件数量:4
端子数量:14最高工作温度:125 °C
封装主体材料:CERAMIC, GLASS-SEALED封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
VCEsat-Max:0.06 VBase Number Matches:1

MAT04AY/883C 数据手册

 浏览型号MAT04AY/883C的Datasheet PDF文件第2页浏览型号MAT04AY/883C的Datasheet PDF文件第3页浏览型号MAT04AY/883C的Datasheet PDF文件第4页浏览型号MAT04AY/883C的Datasheet PDF文件第5页浏览型号MAT04AY/883C的Datasheet PDF文件第6页浏览型号MAT04AY/883C的Datasheet PDF文件第7页 
Matched Monolithic  
Quad Transistor  
a
MAT04  
FEATURES  
PIN CONNECTIONS  
Low Offset Voltage: 200 V max  
High Current Gain: 400 min  
14-Lead Cerdip (Y Suffix)  
14-Lead Plastic DIP (P Suffix)  
14-Lead SO (S Suffix)  
Excellent Current Gain Match: 2% max  
Low Noise Voltage at 100 Hz, 1 mA: 2.5 nV/Hz max  
Excellent Log Conformance: rBE = 0.6 max  
Matching Guaranteed for All Transistors  
Available in Die Form  
PRODUCT DESCRIPTION  
verified to meet stated limits. Device performance is guaranteed  
The MAT04 is a quad monolithic NPN transistor that offers ex-  
cellent parametric matching for precision amplifier and nonlin-  
ear circuit applications. Performance characteristics of the  
MAT04 include high gain (400 minimum) over a wide range of  
collector current, low noise (2.5 nV/Hz maximum at 100 Hz,  
IC = 1 mA) and excellent logarithmic conformance. The  
MAT04 also features a low offset voltage of 200 µV and tight  
current gain matching, to within 2%. Each transistor of the  
MAT04 is individually tested to data sheet specifications. For  
matching parameters (offset voltage, input offset current, and  
gain match), each of the dual transistor combinations are  
at 25°C and over the industrial and military temperature ranges.  
The long-term stability of matching parameters is guaranteed by  
the protection diodes across the base-emitter junction of each  
transistor. These diodes prevent degradation of beta and match-  
ing characteristics due to reverse bias base-emitter current.  
The superior logarithmic conformance and accurate matching  
characteristics of the MAT04 makes it an excellent choice for  
use in log and antilog circuits. The MAT04 is an ideal choice in  
applications where low noise and high gain are required.  
REV. D  
Information furnished by Analog Devices is believed to be accurate and  
reliable. However, no responsibility is assumed by Analog Devices for its  
use, norforanyinfringementsofpatentsorotherrightsofthirdpartiesthat  
may result from its use. No license is granted by implication or otherwise  
under any patent or patent rights of Analog Devices.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781/329-4700  
Fax: 781/326-8703  
www.analog.com  
© Analog Devices, Inc., 2002  

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