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MAP4KE10CE3 PDF预览

MAP4KE10CE3

更新时间: 2024-10-02 09:48:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
6页 428K
描述
Trans Voltage Suppressor Diode, 400W, 8.55V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, DO-41, 2 PIN

MAP4KE10CE3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-PALF-W2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.46其他特性:HIGH RELIABILITY
最大击穿电压:11 V最小击穿电压:9 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值反向功率耗散:400 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM极性:BIDIRECTIONAL
最大功率耗散:1.13 W参考标准:IEC-61000-4-2, 4-4, 4-5; MIL-19500
最大重复峰值反向电压:8.55 V表面贴装:NO
技术:AVALANCHE端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

MAP4KE10CE3 数据手册

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