MA174H

更新时间： 2024-01-13 10:20:52

品牌	Logo	应用领域
松下 - PANASONIC		整流二极管开关光电二极管
页数	文件大小	规格书
3页	81K
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数据手册

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MA174H 数据手册

Switching Diodes

MA4X174 (MA174)

Silicon planar type

Unit: mm

+0.20

–0.05

2.90

For small power rectification and surge absorption

1.9 0.2

+0.10

–0.06

0.16

(0.95) (0.95)

■ Features

• Two isolated elements contained in one package, allowing high-

density mounting

• High breakdown voltage: V_R= 200 V

0.5R

(0.2)

+0.10

0.60

–0.05

■ Absolute Maximum Ratings T_a= 25°C

+0.10

–0.05

0.40

Parameter

Reverse voltage

Symbol

V_R

Rating

200

Unit

10˚

Repetitive peak reverse voltage

V_RRM

V_RSM

250

1: Cathode 1

2: Cathode 2

3: Anode 2

4: Anode 1

Non-repetitive peak reverse

surge voltage

300

Output current

Single

Double

Single

Double

Single

Double

I_O

100

EIAJ: SC-61

Mini4-G1 Package

Marking Symbol: M2O

I_FRM

225

Repetitive peak

forward current

170

Internal Connection

I_FSM

500

Non-repetitive peak

forward surge current ^*

375

Junction temperature

Storage temperature

T_j

125

°C

T_stg

−55 to +125

Note) : t = 1 s

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Forward voltage

Reverse current

Symbol

V_F

Conditions

I_F= 100 mA

V_R= 200 V

Min

Typ

Max

1.3

Unit

I_R

1.0

µA

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 3 MHz.

Note) The part number in the parenthesis shows conventional part number.

Publication date: March 2004

SKF00046BED

12 3

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