Datasheet > M8050

M8050

更新时间： 2023-12-06 20:07:52

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1157K
描述
双极型晶体管

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M8050 数据手册

M8050

Silicon Epitaxial Planar Transistor

SOT-23

Min

FEATURES

Dim

Max

3.10

1.50

High Collector Current.(I_C= 800mA).

Complementary To M8550.

Excellent H Linearity.

2.70

1.10

1.0 Typical

0.4 Typical

High total power dissipation.(P_C=200mW).

0.35

0.48

2.00

0.1

1.80

0.02

APPLICATIONS

0.1 Typical

High Collector Current..

2.20

2.60

All Dimensions in mm

ORDERING INFORMATION

Type No.

M8050

Marking

Y11

Package Code

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

Collector Current -Continuous

Collector Dissipation

I_C

800

℃

P_C

200

Junction and Storage Temperature

T_j,T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

I_C=100μA,I_E=0

I_C=0.1mA,I_B=0

I_E=100μA,I_C=0

V_CB=35V,I_E=0

V_CE=20V,I_B=0

MIN

TYP MAX UNIT

Collector-base breakdown voltage

V_(BR)CBO

Collector-emitter breakdown voltage V_(BR)CEO

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)EBO

I_CBO

0.1

μA

Collector cut-off current

I_CEO

V_CE=1V,I_C=5mA

DC current gain

h_FE

V_CE=1V,I_C=100mA

V_CE=1V,I_C=800mA

300

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

I_C=800mA, I_B=80mA

0.5

1.2

V_CE=6V, I_C= 20mA

f=30MHz

150

MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

80-200

200-300

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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