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TM
M8050-C
M8050-D
Micro Commercial Components
Features
•
•
•
•
•
•
TO-92 Plastic-Encapsulate Transistors
NPN Silicon
Plastic-Encapsulate
Transistor
Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
Collector-current 0.8A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55OC to +150OC
Marking Code: Y11
·
·
·
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
TO-92
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-Base Breakdown Voltage
40
25
6.0
---
---
---
Vdc
Vdc
B
(I =100uAdc, IE=0)
Collector-Emitter Breakdown Voltage
C
(I =1mAdc, IB=0)
C
Emitter-Base Breakdown Voltage
---
Vdc
(I =100uAdc, IC=0)
E
I
Collector Cutoff Current
0.1
0.1
uAdc
uAdc
CBO
(VCB=35Vdc, I =0)
Collector Cutoff Current
E
C
I
---
CEO
(VCE=20Vdc, I =0)
B
ON CHARACTERISTICS
hFE(1)
DC Current Gain
45
(I =5mAdc, VCE=1.0Vdc)
C
hFE(2)
DCCurrent Gain
120
300
(I =100mAdc, VCE=1.0Vdc)
DCCurrent Gain
C
D
hFE(3)
40
---
---
(I =800mAdc, VCE=1.0Vdc)
C
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
0.5
1.2
Vdc
Vdc
(I =800mAdc, IB=80mAdc)
C
Base-Emitter Saturation Voltage
E
E
B
B
C
(I =800mAdc, IB=80mAdc)
C
C
STRAIGHT LEAD BENT LEAD
BULK PACK AMMO PACK
G
SMALL-SIGNAL CHARACTERISTICS
DIMENSIONS
fT
Transistor Frequency
(I =20mAdc, VCE=6.0Vdc, f=30MHz)
C
150
---
MHz
INCHES
MM
DIM
A
B
C
D
MIN
.175
.175
.500
.016
.135
.095
.173
MAX
.185
.185
---
.020
.145
.105
.220
MIN
4.45
4.45
12.70
0.41
3.43
2.42
4.40
MAX
4.70
4.70
---
NOTE
CLASSIFICATION OF HFE (2)
0.63
3.68
2.67
5.60
Rank
Range
C
D
E
120-200
160-300
Straight Lead
Bent Lead
G
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
www.mccsemi.com
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Revision: A
2014/09/05