WILLAS
M7002NND03
WBFBP-03B Plastic-Encapsulate MOSFETS
D
MOSFET( N-Channel )
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
TOP
DESCRIPTION
High cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, and fast switching
performance. They can be used in most applications requiring up to 400mA DC
and can deliver pulsed currents up to 2A. These products are particularly suited
for low voltage, low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
G
S
S
D
1. GATE
2. SOURCE
3. DRAIN
BACK
G
FEATURES
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
APPLICATION
N-Channel Enhancement Mode Field Effect Transistor
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)
Pb-Free package is available
MARKING: 72
D
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
72
G
S
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
60
Units
VDS
Drain-Source Voltage
V
V
VGSS
Gate-Source Voltage - Continuous
±20
Maximum Drain Current - Pulsed
Power Dissipation
ID
115
150
mA
mW
℃/W
℃
PD
RθJA
TJ
Thermal Resistance from Junction to Ambient
Junction Temperature
833
150
Tstg
Storage Temperature
-55~+150
℃
2012-09
WILLAS ELECTRONIC CORP.