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M59DR032EA10ZB1T PDF预览

M59DR032EA10ZB1T

更新时间: 2024-09-25 18:53:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器内存集成电路闪存
页数 文件大小 规格书
43页 369K
描述
2MX16 FLASH 1.8V PROM, 100ns, PBGA48, 7 X 12 MM, 0.75 MM PITCH, TFBGA-48

M59DR032EA10ZB1T 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:BGA包装说明:7 X 12 MM, 0.75 MM PITCH, TFBGA-48
针数:48Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.2Is Samacsys:N
最长访问时间:100 ns启动块:TOP
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PBGA-B48
JESD-609代码:e1长度:12 mm
内存密度:33554432 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:8,63端子数量:48
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH页面大小:4 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.8/2 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1.35 mm
部门规模:4K,32K最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.026 mA
最大供电电压 (Vsup):2.2 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:7 mm
Base Number Matches:1

M59DR032EA10ZB1T 数据手册

 浏览型号M59DR032EA10ZB1T的Datasheet PDF文件第2页浏览型号M59DR032EA10ZB1T的Datasheet PDF文件第3页浏览型号M59DR032EA10ZB1T的Datasheet PDF文件第4页浏览型号M59DR032EA10ZB1T的Datasheet PDF文件第5页浏览型号M59DR032EA10ZB1T的Datasheet PDF文件第6页浏览型号M59DR032EA10ZB1T的Datasheet PDF文件第7页 
M59DR032EA  
M59DR032EB  
32 Mbit (2Mb x 16, Dual Bank, Page )  
1.8V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V  
= V  
= 1.65V to 2.2V for Program,  
DDQ  
DD  
Erase and Read  
– V = 12V for fast Program (optional)  
PP  
ASYNCHRONOUS PAGE MODE READ  
– Page Width: 4 Words  
BGA  
– Page Access: 35ns  
– Random Access: 85ns, 100ns and 120ns  
PROGRAMMING TIME  
TFBGA48 (ZB)  
7 x 12mm  
– 10µs by Word typical  
– Double Word Program Option  
MEMORY BLOCKS  
– Dual Bank Memory Array: 4 Mbit, 28 Mbit  
– Parameter Blocks (Top or Bottom location)  
DUAL BANK OPERATIONS  
BGA  
– Read within one Bank while Program or  
Erase within the other  
TFBGA48 (ZF)  
7 x 7mm  
– No delay between Read and Write operations  
BLOCK LOCKING  
– All blocks locked at Power up  
– Any combination of blocks can be locked  
– WP for Block Lock-Down  
COMMON FLASH INTERFACE (CFI)  
– 64 bit Unique Device Identifier  
– 64 bit User Programmable OTP Cells  
ERASE SUSPEND and RESUME MODES  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Top Device Code, M59DR032EA: 00A0h  
– Bottom Device Code, M59DR032EB: 00A1h  
April 2003  
1/43  

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