256MB, 512MB Unbuffered DIMM Pb-Free
DDR SDRAM
184Pin Unbuffered DIMM based on 256Mb F-die (x8, x16)
Ordering Information
Part Number
Density
128MB
256MB
256MB
512MB
512MB
Organization
16M x 64
32M x 64
32M x 72
64M x 64
64M x 72
Component Composition
Height
1,250mil
1,250mil
1,250mil
1,250mil
1,250mil
M368L1624FUM-C(L)B3/AA/A2/B0
M368L3223FUN-C(L)B3/AA/A2/B0
M381L3223FUM-C(L)B3/AA/A2/B0
M368L6423FUN-C(L)B3/AA/A2/B0
M381L6423FUM-C(L)B3/AA/A2/B0
16Mx16 (K4H561638F) * 4EA
32Mx8 (K4H560838F) * 8EA
32Mx8 (K4H560838F) * 9EA
32Mx8 (K4H560838F) * 16EA
32Mx8 (K4H560838F) * 18EA
Operating Frequencies
B3(DDR333@CL=2.5)
AA(DDR266@CL=2)
133MHz
A2(DDR266@CL=2)
133MHz
B0(DDR266@CL=2.5)
100MHz
Speed @CL2
Speed @CL2.5
CL-tRCD-tRP
133MHz
166MHz
2.5-3-3
133MHz
133MHz
133MHz
2-2-2
2-3-3
2.5-3-3
Feature
• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1,250 (mil), single (128MB, 256MB), double (512MB) sided
•SSTL_2 Interface Pb-Free
• RoHS compliant
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Revision 1.2 Oct. 2004