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M366S1623ETS-C1L PDF预览

M366S1623ETS-C1L

更新时间: 2024-01-04 20:01:00
品牌 Logo 应用领域
三星 - SAMSUNG 时钟动态存储器内存集成电路
页数 文件大小 规格书
11页 168K
描述
Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-168

M366S1623ETS-C1L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIMM包装说明:DIMM, DIMM168
针数:168Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.32
风险等级:5.92访问模式:DUAL BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):100 MHzI/O 类型:COMMON
JESD-30 代码:R-XDMA-N168内存密度:1073741824 bit
内存集成电路类型:SYNCHRONOUS DRAM MODULE内存宽度:64
湿度敏感等级:1功能数量:1
端口数量:1端子数量:168
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX64
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIMM封装等效代码:DIMM168
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度):225电源:3.3 V
认证状态:Not Qualified刷新周期:4096
自我刷新:YES最大待机电流:0.016 A
子类别:DRAMs最大压摆率:1.2 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

M366S1623ETS-C1L 数据手册

 浏览型号M366S1623ETS-C1L的Datasheet PDF文件第5页浏览型号M366S1623ETS-C1L的Datasheet PDF文件第6页浏览型号M366S1623ETS-C1L的Datasheet PDF文件第7页浏览型号M366S1623ETS-C1L的Datasheet PDF文件第8页浏览型号M366S1623ETS-C1L的Datasheet PDF文件第9页浏览型号M366S1623ETS-C1L的Datasheet PDF文件第10页 
M366S1623ETS  
PC133/PC100 Unbuffered DIMM  
Function Supported  
Hex value  
Byte #  
Function Described  
Note  
-7A  
-75  
-1H  
-1L  
-7A  
-75  
-1H  
-1L  
35  
Data signal input hold time  
0.8ns 0.8ns  
1ns  
1ns  
08h  
08h  
10h  
10h  
36~61 Superset information (maybe used in future)  
-
00h  
12h  
62  
63  
64  
SPD data revision code  
PC100 SPD Spec. Ver. 1.2A  
Checksum for bytes 0 ~ 62  
Manufacturer JEDEC ID code  
-
9Fh  
9Eh  
06h  
36h  
Samsung  
CEh  
00h  
01h  
4Dh  
33h  
20h  
36h  
36h  
53h  
31h  
36h  
32h  
33h  
45h  
54h  
53h  
2Dh  
43h  
65~71 ...... Manufacturer JEDEC ID code  
Samsung  
72  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
89  
90  
91  
92  
93  
94  
Manufacturing location  
Onyang Korea  
Manufacturer part # (Memory module)  
Manufacturer part # (DIMM configuration)  
Manufacturer part # (Data bits)  
M
3
Blank  
6
...... Manufacturer part # (Data bits)  
...... Manufacturer part # (Data bits)  
Manufacturer part # (Mode & operating voltage)  
Manufacturer part # (Module depth)  
...... Manufacturer part # (Module depth)  
Manufacturer part # (Refresh, # of banks in Comp. & interface)  
Manufacturer part # (Composition component)  
Manufacturer part # (Component revision)  
Manufacturer part # (Package type)  
Manufacturer part # (PCB revision & type)  
Manufacturer part # (Hyphen)  
6
S
1
6
2
3
E
T
S
" - "  
C
Manufacturer part # (Power)  
Manufacturer part # (Minimum cycle time)  
Manufacturer part # (Minimum cycle time)  
Manufacturer part # (TBD)  
7
7
5
1
1
L
37h  
41h  
37h  
35h  
31h  
48h  
31h  
4Ch  
A
H
Blank  
S
20h  
Manufacturer revision code (For PCB)  
...... Manufacturer revision code (For component)  
Manufacturing date (Year)  
53h  
E-die (6th Gen.)  
45h  
-
-
-
3
3
4
5
Manufacturing date (Week)  
-
95~98 Assembly serial #  
-
-
99~125 Manufacturer specific data (may be used in future)  
Undefined  
100MHz  
126  
127  
System frequency for 100MHz  
PC100 specification details  
Unused storage locations  
64h  
Detailed 100MHz Information  
Undefined  
FFh  
FDh  
FFh  
FDh  
128+  
-
5
Note :  
1. The bank select address is excluded in counting the total # of addresses.  
2. This value is based on the component specification.  
3. These bytes are programmed by code of Date Week & Date Year with BCD format.  
4. These bytes are programmed by Samsung ¢s own Assembly Serial # system. All modules may have different unique serial #.  
5. These bytes are Undefined and can be used for Samsung ¢s own purpose.  
Rev. 0.2 Sept. 2001  

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