Datasheet > M35B32-WDW3TP

M35B32-WDW3TP

更新时间： 2024-02-01 06:44:44

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
44页	633K
描述
32 Kbit, 256-byte page, fast program EEPROM memory accessed by SPI bus interface

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数据手册

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M35B32-WDW3TP 数据手册

M35B32

32 Kbit, 256-byte page, fast program EEPROM memory

accessed by SPI bus interface

Datasheet - target specification

Features

• SPI bus compatible serial interface

• 32 Kbit of EEPROM divided into two sectors:

– Data sector

– Event sector

• Large page size: 256 bytes

• Fast programming:

SO8 (MN)

150 mil width

– Event sector: 256 bytes programmed in

less than 1 ms

– Data sector: 256 bytes written in less than

5 ms

• Low energy EEPROM in either Read, Write,

TSSOP8 (DW)

169 mil width

Program or Erase modes

• 2.5 V to 5.5 V single supply voltage

• Operating temperature range:

• – 40°C to +85°C

• – 40°C to +125°C

• Operating frequency, f = 20 MHz

UFDFPN8 (MC)

2 x 3 mm

• Electronic signature: 20 10 0Ch

• Data cycling:

– Data sector: more than 1 Million write

cycles

– Event sector: more than 10 000 write

cycles

• Data retention:

– Data sector: more than 40 years’ data

retention

– Event sector: 1 year

Packages

• SO8 ECOPACK 2

• TSSOP8 ECOPACK 2

• UFDFPN8 ECOPACK 2

May 2015

DocID18391 Rev 4

1/44

This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

www.st.com

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