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M29W800DB70ZA1E PDF预览

M29W800DB70ZA1E

更新时间: 2024-09-30 05:23:27
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意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
42页 303K
描述
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

M29W800DB70ZA1E 数据手册

 浏览型号M29W800DB70ZA1E的Datasheet PDF文件第2页浏览型号M29W800DB70ZA1E的Datasheet PDF文件第3页浏览型号M29W800DB70ZA1E的Datasheet PDF文件第4页浏览型号M29W800DB70ZA1E的Datasheet PDF文件第5页浏览型号M29W800DB70ZA1E的Datasheet PDF文件第6页浏览型号M29W800DB70ZA1E的Datasheet PDF文件第7页 
M29W800DT  
M29W800DB  
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
VCC = 2.7V to 3.6V for Program, Erase  
and Read  
Figure 1. Packages  
ACCESS TIMES: 45, 70, 90ns  
PROGRAMMING TIME  
10µs per Byte/Word typical  
19 MEMORY BLOCKS  
1 Boot Block (Top or Bottom Location)  
2 Parameter and 16 Main Blocks  
SO44 (M)  
PROGRAM/ERASE CONTROLLER  
Embedded Byte/Word Program  
algorithms  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
TSOP48 (N)  
12 x 20mm  
UNLOCK BYPASS PROGRAM COMMAND  
Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
FBGA  
64 bit Security Code  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
TFBGA48 (ZA)  
6 x 9 mm  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
FBGA  
Manufacturer Code: 0020h  
Top Device Code M29W800DT: 22D7h  
Bottom Device Code M29W800DB:  
225Bh  
TFBGA48 (ZE)  
6 x 8mm  
September 2004  
1/42  
 
 

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