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M29W800DB70ZE6F PDF预览

M29W800DB70ZE6F

更新时间: 2024-10-01 15:18:19
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
53页 1053K
描述
8Mb (1Mb x8 or 512Kb x16), 3V, Boot Block, Parallel NOR Flash Memory

M29W800DB70ZE6F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA, BGA48,6X8,32针数:48
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.39
最长访问时间:70 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PBGA-B48
JESD-609代码:e1长度:8 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,15端子数量:48
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:6 mm
Base Number Matches:1

M29W800DB70ZE6F 数据手册

 浏览型号M29W800DB70ZE6F的Datasheet PDF文件第2页浏览型号M29W800DB70ZE6F的Datasheet PDF文件第3页浏览型号M29W800DB70ZE6F的Datasheet PDF文件第4页浏览型号M29W800DB70ZE6F的Datasheet PDF文件第5页浏览型号M29W800DB70ZE6F的Datasheet PDF文件第6页浏览型号M29W800DB70ZE6F的Datasheet PDF文件第7页 
M29W800DT  
M29W800DB  
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block)  
3 V supply flash memory  
Features  
„ Supply voltage  
– VCC = 2.7 V to 3.6 V for program, erase  
and read  
„ Access times: 45, 70, 90 ns  
„ Programming time  
– 10 μs per byte/word typical  
SO44 (M)  
„ 19 memory blocks  
– 1 boot block (top or bottom location)  
– 2 parameter and 16 main blocks  
„ Program/erase controller  
– Embedded byte/word program algorithms  
„ Erase suspend and resume modes  
TSOP48 (N)  
12 x 20 mm  
– Read and program another block during  
erase suspend  
„ Unlock bypass program command  
FBGA  
– Faster production/batch programming  
„ Temporary block unprotection mode  
TFBGA48 (ZE)  
6 x 8 mm  
„ Common flash interface  
– 64-bit security code  
„ Low power consumption  
– Standby and automatic standby  
„ 100,000 program/erase cycles per block  
„ Electronic signature  
– Manufacturer code: 0020h  
Top device code M29W800DT: 22D7h  
– Bottom device code M29W800DB: 225Bh  
January 2018  
Rev 12  
1/52  
www.numonyx.com  
1

M29W800DB70ZE6F 替代型号

型号 品牌 替代类型 描述 数据表
M29W800DB70ZE6E MICRON

完全替代

8Mb (1Mb x8 or 512Kb x16), 3V, Boot Block, Parallel NOR Flash Memory
AM29DL800BB70WBF AMD

功能相似

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
M29W800DB70ZE6E STMICROELECTRONICS

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8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

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