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M29W400BB55ZA1 PDF预览

M29W400BB55ZA1

更新时间: 2024-01-21 19:06:49
品牌 Logo 应用领域
恒忆 - NUMONYX 内存集成电路
页数 文件大小 规格书
23页 159K
描述
Flash, 256KX16, 55ns, PBGA48, 0.80 MM PITCH, TFBGA-48

M29W400BB55ZA1 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:48
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.13
最长访问时间:55 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
长度:9 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:48
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE宽度:6 mm
Base Number Matches:1

M29W400BB55ZA1 数据手册

 浏览型号M29W400BB55ZA1的Datasheet PDF文件第2页浏览型号M29W400BB55ZA1的Datasheet PDF文件第3页浏览型号M29W400BB55ZA1的Datasheet PDF文件第4页浏览型号M29W400BB55ZA1的Datasheet PDF文件第5页浏览型号M29W400BB55ZA1的Datasheet PDF文件第6页浏览型号M29W400BB55ZA1的Datasheet PDF文件第7页 
M29W400BT  
M29W400BB  
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)  
Low Voltage Single Supply Flash Memory  
PRELIMINARY DATA  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 55ns  
44  
PROGRAMMING TIME  
– 10µs per Byte/Word typical  
1
11 MEMORY BLOCKS  
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 8 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
BGA  
FBGA48 (ZA)  
8 x 6 solder balls  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
V
CC  
MODE  
LOW POWER CONSUMPTION  
18  
15  
– Standby and Automatic Standby  
A0-A17  
DQ0-DQ14  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
W
E
DQ15A–1  
BYTE  
RB  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
M29W400BT  
M29W400BB  
G
RP  
– M29W400BT Device Code: 00EEh  
– M29W400BB Device Code: 00EFh  
V
SS  
AI02934  
October 1999  
1/23  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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