Datasheet > M28W320EBB70N6

M28W320EBB70N6

更新时间： 2024-09-24 23:05:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
45页	300K
描述
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

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M28W320EBB70N6 数据手册

M28W320EBT

M28W320EBB

32 Mbit (2Mb x16, Boot Block)

3V Supply Flash Memory

PRELIMINARY DATA

FEATURES SUMMARY

■ SUPPLY VOLTAGE

Figure 1. Packages

– V = 2.7V to 3.6V Core Power Supply

– V

= 1.65V to 3.6V for Input/Output

DDQ

FBGA

– V = 12V for fast Program (optional)

■ ACCESS TIME: 70, 85, 90,100ns

■ PROGRAMMING TIME

TFBGA47 (ZB)

6.39 x 6.37mm

– 10µs typical

– Double Word Programming Option

– Quadruple Word Programming Option

■ COMMON FLASH INTERFACE

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

■ BLOCK PROTECTION on TWO PARAMETER

TSOP48 (N)

12 x 20mm

BLOCKS

– WP for Block Protection

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W320EBT: 88BCh

– Bottom Device Code, M28W320EBB: 88BDh

October 2002

1/45

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...45

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