生命周期: | Obsolete | 零件包装代码: | TSOP |
包装说明: | 8 X 20 MM, PLASTIC, TSOP-32 | 针数: | 32 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.41 |
最长访问时间: | 90 ns | JESD-30 代码: | R-PDSO-G32 |
长度: | 18.4 mm | 内存密度: | 2097152 bit |
内存集成电路类型: | FLASH | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 32 |
字数: | 262144 words | 字数代码: | 256000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 256KX8 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP1-R | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
编程电压: | 12 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
类型: | NOR TYPE | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M28F201-90N1TR | STMICROELECTRONICS |
获取价格 |
2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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M28F201-90N3R | STMICROELECTRONICS |
获取价格 |
2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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M28F201-90N3RTR | STMICROELECTRONICS |
获取价格 |
256KX8 FLASH 12V PROM, 90ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32 |
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M28F201-90N3TR | STMICROELECTRONICS |
获取价格 |
2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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M28F201-90N6R | STMICROELECTRONICS |
获取价格 |
2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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M28F201-90N6TR | STMICROELECTRONICS |
获取价格 |
2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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M28F201-90XK1R | STMICROELECTRONICS |
获取价格 |
2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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M28F201-90XK1TR | STMICROELECTRONICS |
获取价格 |
2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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M28F201-90XK3 | STMICROELECTRONICS |
获取价格 |
256KX8 FLASH 12V PROM, 90ns, PQCC32, PLASTIC, LCC-32 |
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M28F201-90XK3R | STMICROELECTRONICS |
获取价格 |
2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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