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M28F201-150N6RTR PDF预览

M28F201-150N6RTR

更新时间: 2024-01-06 16:09:48
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
21页 150K
描述
256KX8 FLASH 12V PROM, 150ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32

M28F201-150N6RTR 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:8 X 20 MM, PLASTIC, TSOP-32针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.58
最长访问时间:150 nsJESD-30 代码:R-PDSO-G32
长度:18.4 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1-R封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
编程电压:12 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

M28F201-150N6RTR 数据手册

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M28F201  
2 Mbit (256Kb x8, Bulk) Flash Memory  
5V ± 10% SUPPLYVOLTAGE  
12V PROGRAMMING VOLTAGE  
FASTACCESS TIME: 70ns  
BYTE PROGRAMMING TIME: 10µs typical  
ELECTRICAL CHIP ERASE in 1s RANGE  
LOW POWER CONSUMPTION  
– Active Current: 15mA typical  
– Stand-byCurrent: 5µA typical  
10,000 PROGRAM/ERASE CYCLES  
PLCC32 (K)  
TSOP32 (N)  
8 x 20 mm  
INTEGRATED ERASE/PROGRAM-STOP  
TIMER  
OTP COMPATIBLE PACKAGES and PINOUT  
20 YEARSDATARETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– ManufacturerCode: 20h  
Figure 1. Logic Diagram  
– Device Code: F4h  
DESCRIPTION  
The M28F201 Flash memory is a non-volatile  
memory that may be erased electricallyat the chip  
level and programmed by byte. It is organised as  
256K bytes by 8 bits. It uses a command register  
architecturetoselecttheoperatingmodesandthus  
provide a simple microprocessor interface. The  
device is offered in PLCC32 and TSOP32 (8 x  
20mm)packages.Bothnormalandreversepinouts  
are available for the TSOP32package.  
V
V
PP  
CC  
18  
8
A0-A17  
DQ0-DQ7  
W
E
M28F201  
Table 1. Signal Names  
G
A0-A17  
Address Inputs  
Data Inputs / Outputs  
Chip Enable  
DQ0-DQ7  
E
V
SS  
AI00637C  
G
Output Enable  
Write Enable  
W
VPP  
VCC  
VSS  
Program Supply  
Supply Voltage  
Ground  
August 1998  
1/21  

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