M28F201-120K6TR

更新时间： 2024-02-04 17:27:36

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
21页	180K
描述
2 Mb 256K x 8, Chip Erase FLASH MEMORY

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中文翻译

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数据手册

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M28F201-120K6TR 数据手册

M28F201

2 Mb (256K x 8, Chip Erase) FLASH MEMORY

5V ± 10% SUPPLY VOLTAGE

12V PROGRAMMING VOLTAGE

FAST ACCESS TIME: 70ns

BYTE PROGRAMMING TIME: 10µs typical

ELECTRICALCHIP ERASE in 1s RANGE

LOW POWER CONSUMPTION

– Active Current: 15mAtypical

PLCC32 (K)

TSOP32 (N)

8 x 20 mm

– Stand-by Current: 10µA typical

10,000 PROGRAM/ERASE CYCLES

INTEGRATED ERASE/PROGRAM-STOP

TIMER

OTP COMPATIBLE PACKAGES and PINOUTS

ELECTRONIC SIGNATURE

– ManufacturerCode: 20h

Figure 1. Logic Diagram

– Device Code: F4h

DESCRIPTION

The M28F201 FLASH Memory product is a non-

volatile memories which may be erased electrically

at the chip level and programmed byte-by-byte. It

is organised as 256K bytes. It uses a command

and thus provide a simple microprocessor inter-

face. The M28F201 FLASH Memory product is

suitable for applicationswhere the memory has to

be reprogrammed in the equipment. The access

time of 70ns makes the device suitable for use in

high speed microprocessor systems.

A0-A17

DQ0-DQ7

M28F201

Table 1. Signal Names

A0-A17

Address Inputs

Data Inputs / Outputs

Chip Enable

DQ0-DQ7

AI00637C

Output Enable

Write Enable

V_PP

V_CC

V_SS

Program Supply

Supply Voltage

Ground

April 1997

1/21

12 3 4 5 6 7...21

中文翻译

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