Datasheet > M28F201-120N3RTR

M28F201-120N3RTR

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器光电二极管
页数	文件大小	规格书
21页	150K
描述
256KX8 FLASH 12V PROM, 120ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32

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M28F201-120N3RTR 数据手册

M28F201

2 Mbit (256Kb x8, Bulk) Flash Memory

5V ± 10% SUPPLYVOLTAGE

12V PROGRAMMING VOLTAGE

FASTACCESS TIME: 70ns

BYTE PROGRAMMING TIME: 10µs typical

ELECTRICAL CHIP ERASE in 1s RANGE

LOW POWER CONSUMPTION

– Active Current: 15mA typical

– Stand-byCurrent: 5µA typical

10,000 PROGRAM/ERASE CYCLES

PLCC32 (K)

TSOP32 (N)

8 x 20 mm

INTEGRATED ERASE/PROGRAM-STOP

TIMER

OTP COMPATIBLE PACKAGES and PINOUT

20 YEARSDATARETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– ManufacturerCode: 20h

Figure 1. Logic Diagram

– Device Code: F4h

DESCRIPTION

The M28F201 Flash memory is a non-volatile

memory that may be erased electricallyat the chip

level and programmed by byte. It is organised as

256K bytes by 8 bits. It uses a command register

architecturetoselecttheoperatingmodesandthus

provide a simple microprocessor interface. The

device is offered in PLCC32 and TSOP32 (8 x

20mm)packages.Bothnormalandreversepinouts

are available for the TSOP32package.

A0-A17

DQ0-DQ7

M28F201

Table 1. Signal Names

A0-A17

Address Inputs

Data Inputs / Outputs

Chip Enable

DQ0-DQ7

AI00637C

Output Enable

Write Enable

V_PP

V_CC

V_SS

Program Supply

Supply Voltage

Ground

August 1998

1/21

12 3 4 5 6 7...21

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