Datasheet > M27C257

M27C257

更新时间： 2024-01-20 10:39:13

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双倍数据速率可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
13页	145K
描述
ADDRESS LATCHED 256K (32K x 8) UV EPROM and OTP EPROM

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M27C257 数据手册

M87C257

ADDRESS LATCHED

256K (32K x 8) UV EPROM and OTP EPROM

INTEGRATED ADDRESS LATCH

FAST ACCESS TIME: 45ns

LOW POWER “CMOS” CONSUMPTION:

– Active Current 30mA

– Standby Current 100µA

PROGRAMMING VOLTAGE: 12.75V

ELECTRONIC SIGNATURE for AUTOMATED

PROGRAMMING

FDIP28W (F)

PLCC32 (C)

PROGRAMMING TIMES of AROUND 3sec.

(PRESTO II ALGORITHM)

Figure 1. Logic Diagram

DESCRIPTION

The M87C257 is a high speed 262,144 bit UV

erasable and electrically programmable EPROM.

The M87C257 incorporates latches for all address

inputs to minimize chip count, reduce cost, and

simplify the design of multiplexed bus systems.

The Window Ceramic Frit-Seal Dual-in-Line pack-

age has a transparent lid which allows the user to

expose the chip to ultraviolet light to erase the bit

pattern. A new pattern can then be written to the

device by following the programming procedure.

A0-A14

Q0-Q7

For applications where the content is programmed

only one time and erasure is not required, the

M87C257 is offered in Plastic Leaded Chip Carrier,

package.

M87C257

Table 1. Signal Names

ASV

A0 - A14

Q0 - Q7

Address Inputs

Data Outputs

Chip Enable

AI00928B

Output Enable

ASV_PP

V_CC

Address Strobe / Program Supply

Supply Voltage

Ground

V_SS

June 1996

1/13

12 3 4 5 6 7...13

中文翻译

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