Datasheet > M14256

M14256

更新时间： 2024-09-24 22:30:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
12页	114K
描述
Memory Card IC 256/128 Kbit Serial IC Bus EEPROM

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中文翻译

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M14256 数据手册

M14256

M14128

Memory Card IC

256/128 Kbit Serial I²C Bus EEPROM

PRELIMINARY DATA

■ Compatible with I C Extended Addressing

■ Two Wire I C Serial Interface

Supports 400 kHz Protocol

■ Single Supply Voltage (2.5 V to 5.5 V)

■ Hardware Write Control

■ BYTE and PAGE WRITE (up to 64 Bytes)

■ BYTE, RANDOM and SEQUENTIAL READ

Modes

■ Self-Timed Programming Cycle

■ Automatic Address Incrementing

■ Enhanced ESD/Latch-Up Behaviour

■ 100,000 Erase/Write Cycles (minimum)

■ 40 Year Data Retention (minimum)

■ 5 ms Programming Time (typical)

Micromodule (D22)

DESCRIPTION

Each device is an electrically erasable program-

mable memory (EEPROM) fabricated with STMi-

croelectronics’s

High

Endurance,

Double

Polysilicon, CMOS technology. This guarantees

an endurance typically well above 100,000 Erase/

Write cycles, with a data retention of 40 years. The

memory operates with a power supply as low as

2.5 V.

Figure 1. Logic Diagram

The M14256 and M14128 are available in micro-

module form only. For availability of the M14256 or

Table 1. Signal Names

SCL

SDA

Serial Data/Address Input/

Output

M14xxx

SCL

Serial Clock

Write Control

Supply Voltage

Ground

GND

AI02217

GND

October 1999

1/12

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...12

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