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LZ2364BJ PDF预览

LZ2364BJ

更新时间: 2024-02-20 20:32:47
品牌 Logo 应用领域
夏普 - SHARP 传感器
页数 文件大小 规格书
12页 98K
描述
1/3-type CCD Area Sensors with 470 k Pixels

LZ2364BJ 技术参数

是否Rohs认证:不符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N水平像素:752
JESD-609代码:e0安装特点:THROUGH HOLE MOUNT
最高工作温度:70 °C最低工作温度:-20 °C
像素大小:6.5X6.3 µm电源:15 V
子类别:CCD Image Sensors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)垂直像素:582
Base Number Matches:1

LZ2364BJ 数据手册

 浏览型号LZ2364BJ的Datasheet PDF文件第2页浏览型号LZ2364BJ的Datasheet PDF文件第3页浏览型号LZ2364BJ的Datasheet PDF文件第4页浏览型号LZ2364BJ的Datasheet PDF文件第6页浏览型号LZ2364BJ的Datasheet PDF文件第7页浏览型号LZ2364BJ的Datasheet PDF文件第8页 
LZ2363B/LZ2364BJ  
CHARACTERISTICS FOR LZ2364BJ (Drive method : Field accumulation)  
(TA = +25 ˚C, Operating conditions : The typical values specified in "RECOMMENDED OPERATING CONDITIONS".  
Color temperature of light source : 3 200 K, IR cut-off filter (CM-500, 1 mmt) is used.)  
PARAMETER  
Standard output voltage  
SYMBOL  
VO  
MIN.  
650  
370  
TYP. MAX. UNIT NOTE  
150  
mV  
%
2
3
Photo response non-uniformity  
Saturation output voltage  
Dark output voltage  
Dark signal non-uniformity  
Sensitivity  
PRNU  
VSAT  
VDARK  
DSNU  
R
10  
mV  
mV  
mV  
mV  
4
0.5  
0.5  
500  
1
3.0  
2.0  
1, 5  
1, 6  
7
Gamma  
Smear ratio  
Image lag  
SMR  
AI  
–84  
–76  
1.0  
dB  
%
8
9
Blooming suppression ratio  
Output transistor drain current  
Output impedance  
Dark noise  
ABL  
IOD  
RO  
1 000  
10  
4.0  
350  
0.2  
8.0  
mA  
$
mV  
mV  
VNOISE  
0.3  
1.0  
11  
1, 12  
OB difference in level  
NOTES :  
• VOFD should be adjusted to the minimum voltage such  
that ABL satisfy the specification, or to the value  
displayed on the device.  
7. The average output voltage when a 1 000 lux light  
source with a 90% reflector is imaged by a lens of F4,  
f50 mm.  
1. TA = +60 ˚C  
8. The sensor is exposed only in the central area of V/10  
square with a lens at F4, where V is the vertical image  
size. SMR is defined by the ratio of the output voltage  
detected during the vertical blanking period to the  
maximum output voltage in the V/10 square.  
9. The sensor is exposed at the exposure level  
corresponding to the standard conditions. AI is defined  
by the ratio of the output voltage measured at the 1st  
field during the non-exposure period to the standard  
output voltage.  
10. The sensor is exposed only in the central area of V/10  
square, where V is the vertical image size. ABL is  
defined by the ratio of the exposure at the standard  
conditions to the exposure at a point where blooming is  
observed.  
2. The average output voltage under uniform illumination.  
The standard exposure conditions are defined as when  
Vo is 150 mV.  
3. The image area is divided into 10 x 10 segments under  
the standard exposure conditions. Each segment's  
voltage is the average output voltage of all pixels within  
the segment. PRNU is defined by (Vmax – Vmin)/Vo,  
where Vmax and Vmin are the maximum and minimum  
values of each segment's voltage respectively.  
4. The image area is divided into 10 x 10 segments. Each  
segment's voltage is the average output voltage of all  
pixels within the segment. VSAT is the minimum  
segment's voltage under 10 times exposure of the  
standard exposure conditions.  
5. The average output voltage under non-exposure  
conditions.  
11. The RMS value of the dark noise after CDS. (100 kHz to  
5.0 MHz, SC trap on.)  
6. The image area is divided into 10 x 10 segments under  
non-exposure conditions. DSNU is defined by (Vdmax –  
Vdmin), where Vdmax and Vdmin are the maximum and  
minimum values of each segment's voltage respectively.  
12. The difference between the average output voltage of  
the effective area and that of the OB area under non-  
exposure conditions.  
5

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