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LTC1165CS8#TRPBF PDF预览

LTC1165CS8#TRPBF

更新时间： 2024-01-10 12:17:09
品牌 Logo 应用领域
凌特 - Linear 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
8页 233K
描述
LTC1165 - Triple 1.8V to 6V High-Side MOSFET Drivers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C

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LTC1165CS8#TRPBF 技术参数

是否Rohs认证：符合生命周期：Transferred
零件包装代码：SOIC包装说明：SOP, SOP8,.25
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.32Is Samacsys：N
高边驱动器：YES输入特性：SCHMITT TRIGGER
接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVERJESD-30 代码：R-PDSO-G8
JESD-609代码：e3长度：4.9 mm
湿度敏感等级：1功能数量：3
端子数量：8最高工作温度：70 °C
最低工作温度：输出特性：TOTEM-POLE
输出极性：INVERTED封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260电源：1.8/6 V
认证状态：Not Qualified座面最大高度：1.75 mm
子类别：MOSFET Drivers表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30断开时间：150 µs
接通时间：400 µs宽度：3.9 mm
Base Number Matches：1

LTC1165CS8#TRPBF 数据手册

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LTC1163/LTC1165  
U
OPERATIO  
Gate Charge Pump  
Controlled Gate Rise and Fall Times  
Gate drive for the power MOSFET is produced by an  
internal charge pump circuit which generates a gate volt-  
age substantially higher than the power supply voltage.  
The charge pump capacitors are included on chip and  
thereforenoexternalcomponentsarerequiredtogenerate  
gate drive.  
When the input is switched ON and OFF, the gate is  
charged by the internal charge pump and discharged in a  
controlled manner. The charge and discharge rates have  
been set to minimize RFI and EMI emissions.  
W
BLOCK DIAGRA  
(One Channel)  
LTC1165  
LTC1163  
HIGH  
FREQUENCY  
OSCILLATOR  
CHARGE  
GATE  
PUMP  
GATE  
DISCHARGE  
BIAS  
GENERATOR  
INPUT  
LOGIC  
14V  
LTC1163/65 • BD  
U U  
W
U
APPLICATIO S I FOR ATIO  
Logic-Level MOSFET Switches  
For example, if a 100µF capacitor is powered through a  
switchwithaslewrateof0.1V/µs, thecurrentduringstart-  
up is:  
The LTC1163/LTC1165 are designed to operate with  
logic-level N-channel MOSFET switches. Although there  
is some variation among manufacturers, logic-level  
MOSFET switches are typically rated with VGS = 4V with  
a maximum continuous VGS rating of ±10V. RDS(ON) and  
maximum VDS ratings are similar to standard MOSFETs  
and there is generally little price differential. Logic-level  
MOSFETs are frequently designated by an “L” and are  
usually available in surface mount packaging. Some  
logic-level MOSFETs are rated with VGS up to ±15V and  
can be used in applications which require operation over  
the entire 1.8V to 6V range.  
ISTART = C(∆V/∆t)  
= (100 × 10–6)(1 × 105)  
= 10A  
Obviously, this is too much current for the regulator (or  
output capacitor) to supply and the output will glitch by as  
much as a few volts.  
The startup current can be substantially reduced by limit-  
ing the slew rate at the gate of an N-channel as shown in  
Figure 1. The gate drive output of the LTC1163/LTC1165  
is passed through a simple RC network, R1 and C1, which  
substantially slows the slew rate of the MOSFET gate to  
approximately 1.5 × 10–4V/µs. Since the MOSFET is  
operating as a source follower, the slew rate at the source  
is essentially the same as that at the gate, reducing the  
startup current to approximately 15mA which is easily  
Powering Large Capacitive Loads  
Electrical subsystems in portable battery-powered equip-  
ment are typically bypassed with large filter capacitors to  
reduce supply transients and supply induced glitching. If  
not properly powered however, these capacitors may  
themselves become the source of supply glitching.  
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