5秒后页面跳转
LNK6417K PDF预览

LNK6417K

更新时间: 2022-09-29 19:46:46
品牌 Logo 应用领域
帕沃英蒂格盛 - POWERINT /
页数 文件大小 规格书
18页 2342K
描述
IC LINKSWITCH CV/CC 7.5W 12ESOP

LNK6417K 数据手册

 浏览型号LNK6417K的Datasheet PDF文件第3页浏览型号LNK6417K的Datasheet PDF文件第4页浏览型号LNK6417K的Datasheet PDF文件第5页浏览型号LNK6417K的Datasheet PDF文件第7页浏览型号LNK6417K的Datasheet PDF文件第8页浏览型号LNK6417K的Datasheet PDF文件第9页 
LNK64x4-64x8  
Figure 5.  
PCB (Bottom Layer on Left) (Top Layer on Right) Layout Example Showing 10 W Design using K Package.  
minimize the high frequency ringing will give the best regulation.  
Figure 6 shows the desired drain voltage waveform compared to  
Figure 7 with a large undershoot due to the leakage inductance  
induced ring. This will reduce the output voltage regulation  
performance. To reduce this adjust the value of the resistor in series  
with the clamp diode.  
0.7 mA typ.) is the IC supply current and VBP (6.2 V typ.) is the  
BYPASS pin voltage. The parameters IS2 and VBP are provided in the  
parameter table of the LinkSwitch-3 data sheet. Diode D3 can be any  
low cost diode such as FR102, 1N4148 or BAV19/20/21.  
Quick Design Checklist  
As with any power supply design, all LinkSwitch-3 designs should be  
verified on the bench to make sure that component specifications are  
not exceeded under worst-case conditions.  
Addition of a Bias Circuit for Higher Light Load  
Efficiency and Lower No-load Input Power  
Consumption  
The following minimum set of tests is strongly recommended:  
The addition of a bias circuit can decrease the no-load input power  
from ~200 mW down to less than 30 mW at 230 VAC input. Light  
load efficiency also increases which may avoid the need to use a  
Schottky barrier vs. PN junction output diode while still meeting  
average efficiency requirements.  
1. Maximum drain voltage – Verify that peak VDS does not exceed  
680 V at the highest input voltage and maximum output power.  
2. Maximum drain current – At maximum ambient temperature,  
maximum input voltage and maximum output load, verify drain  
current waveforms at start-up for any signs of transformer  
saturation and excessive leading edge current spikes.  
The power supply schematic shown in Figure 4 has only one winding  
for both feedback and bias circuit. Diode D3, C8, R5 and R8 form the  
bias circuit. The feedback winding voltage is designed at 11 V, this  
provides a high enough voltage to supply the BYPASS pin even during  
low switching frequency operation at no-load.  
LinkSwitch-3 has a leading edge blanking time of 170 ns to  
prevent premature termination of the ON-cycle.  
3. Thermal check – At maximum output power, both minimum and  
maximum input voltage and maximum ambient temperature;  
verify that temperature specifications are not exceeded for  
LinkSwitch-3, transformer, output diodes and output capacitors.  
Enough thermal margin should be allowed for part-to-part variation  
of the RDS(ON) of LinkSwitch-3, as specified in the data sheet.  
A 10 mF capacitance value is recommended for C8 to hold up the bias  
voltage at the low switching frequencies that occur at light to  
no-load. The capacitor type is not critical but the voltage rating  
should be above the maximum value of VBIAS. The recommended  
current into the BYPASS pin is equal to IC supply current (0.6 mA to  
0.7 mA) at the minimum bias winding voltage. The BYPASS pin  
current should not exceed 10 mA at the maximum bias winding  
voltage. The value of R8 is calculated according to (VBIAS – VBP)/IS2,  
where VBIAS (10 V typ.) is the voltage across C8, IS2 (0.6 mA to  
Design Tools  
Up-to-date information on design tools can be found at the Power  
Integrations web site: www.power.com  
6
Rev. C 03/16  
www.power.com  

与LNK6417K相关器件

型号 品牌 描述 获取价格 数据表
LNK6417K-TL POWERINT IC LINKSWITCH CV/CC 7.5W 12ESOP

获取价格

LNK6418E POWERINT IC LINKSWITCH CV/CC 10W 7ESIP

获取价格

LNK6418K POWERINT IC LINKSWITCH CV/CC 10W 12ESOP

获取价格

LNK6418K-TL POWERINT IC LINKSWITCH CV/CC 10W 12ESOP

获取价格

LNK6424D POWERINT IC SWITCHER CV/CC 3.5W 8SOIC

获取价格

LNK6424D-TL POWERINT IC SWITCHER CV/CC 3.5W 8SOIC

获取价格