是否无铅: | 含铅 | 生命周期: | Active |
零件包装代码: | SOIC | 包装说明: | LEAD FREE, MICRO-8 |
针数: | 8 | Reach Compliance Code: | unknown |
风险等级: | 5.41 | Is Samacsys: | N |
放大器类型: | OPERATIONAL AMPLIFIER | 标称共模抑制比: | 65 dB |
最大输入失调电压: | 9000 µV | JESD-30 代码: | S-PDSO-G8 |
JESD-609代码: | e3 | 长度: | 3 mm |
湿度敏感等级: | NOT SPECIFIED | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSSOP | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | COMMERCIAL | 座面最大高度: | 1.1 mm |
标称压摆率: | 1 V/us | 子类别: | Operational Amplifier |
供电电压上限: | 5.5 V | 标称供电电压 (Vsup): | 2.7 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子节距: | 0.65 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
标称均一增益带宽: | 1000 kHz | 宽度: | 3 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
LMV358DR | TI | LOW-VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS |
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LMV358-DR | HMSEMI | 1MHZ CMOS Rail-to-Rail IO Opamp with RF Filter |
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|
LMV358DR2G | ROCHESTER | DUAL OP-AMP, 9000uV OFFSET-MAX, 1MHz BAND WIDTH, PDSO8, LEAD FREE, SOIC-8 |
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LMV358DR2G | ONSEMI | Single, Dual, Quad Low-Voltage, Rail-to-Rail Operational Amplifiers |
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|
LMV358G-D08-T | UTC | GENERAL PURPOSE, LOW VOLTAGE, RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS |
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LMV358G-P08-R | UTC | GENERAL PURPOSE, LOW VOLTAGE, RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS |
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