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LMH6572MQX/NOPB PDF预览

LMH6572MQX/NOPB

更新时间: 2024-02-05 20:05:52
品牌 Logo 应用领域
德州仪器 - TI 放大器光电二极管运算放大器复用器
页数 文件大小 规格书
26页 1726K
描述
具有三路 2:1 高速多路复用器的 350MHz 高速运算放大器 | DBQ | 16 | -40 to 85

LMH6572MQX/NOPB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SSOP, SSOP16,.25针数:16
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:0.97模拟集成电路 - 其他类型:VIDEO MULTIPLEXER
JESD-30 代码:R-PDSO-G16JESD-609代码:e3
长度:4.9 mm湿度敏感等级:1
负电源电压最大值(Vsup):-6 V负电源电压最小值(Vsup):-3 V
标称负供电电压 (Vsup):-3.3 V正常位置:NC
信道数量:3功能数量:3
端子数量:16最高工作温度:85 °C
最低工作温度:-40 °C输出:COMMON OUTPUT
封装主体材料:PLASTIC/EPOXY封装代码:SSOP
封装等效代码:SSOP16,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, SHRINK PITCH峰值回流温度(摄氏度):260
电源:3.3/5 V认证状态:Not Qualified
座面最大高度:1.75 mm最大信号电流:0.02 A
子类别:Multiplexer or Switches最大供电电流 (Isup):28.5 mA
最大供电电压 (Vsup):6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.64 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

LMH6572MQX/NOPB 数据手册

 浏览型号LMH6572MQX/NOPB的Datasheet PDF文件第2页浏览型号LMH6572MQX/NOPB的Datasheet PDF文件第3页浏览型号LMH6572MQX/NOPB的Datasheet PDF文件第4页浏览型号LMH6572MQX/NOPB的Datasheet PDF文件第6页浏览型号LMH6572MQX/NOPB的Datasheet PDF文件第7页浏览型号LMH6572MQX/NOPB的Datasheet PDF文件第8页 
LMH6572  
www.ti.com.cn  
ZHCSIP3G JUNE 2005REVISED AUGUST 2018  
6.5 ±5V Electrical Characteristics  
VS = ±5 V and RL = 100 , (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS(1)  
MIN  
TYP  
MAX  
UNIT  
FREQUENCY DOMAIN PERFORMANCE  
SSBW  
LSBW  
–3 dB Bandwidth  
–3 dB Bandwidth(2)  
VOUT = 0.25 VPP  
350  
290  
MHz  
MHz  
MHz  
VOUT = 2 VPP  
250  
.1 dBBW 0.1 dB Bandwidth  
VOUT = 0.25 VPP  
140  
DG  
DP  
Differential Gain  
RL = 150 , f = 4.43 MHz  
RL = 150 , f = 4.43 MHz  
0.02%  
0.02  
Differential Phase  
deg  
TIME DOMAIN RESPONSE  
TRS  
Channel to Channel Switching Time  
Logic Transition to 90% Output  
10  
11  
ns  
ns  
ns  
ns  
Enable and Disable Times  
Rise and Fall Time  
Settling Time to 0.05%  
Overshoot  
Logic Transition to 90% or 10% Output  
TRL  
TSS  
OS  
2-V Step  
2-V Step  
4-V Step  
4-V Step  
1.5  
17  
5%  
1400  
SR  
Slew Rate(2)  
1200  
V/µs  
DISTORTION  
HD2  
HD3  
IMD  
2nd Harmonic Distortion  
3rd Harmonic Distortion  
3rd Order Intermodulation Products  
2 VPP , 10 MHz  
78  
75  
80  
dBc  
dBc  
dBc  
2 VPP , 10 MHz  
10 MHz, Two tones 2 VPP at Output  
EQUIVALENT INPUT NOISE  
VN  
Voltage  
Current  
>1 MHz, Input Referred  
>1 MHz, Input Referred  
5
5
nVHz  
pA/Hz  
ICN  
STATIC, DC PERFORMANCE  
GAIN  
Voltage Gain  
2.0  
V/V  
No load, with respect to nominal gain of  
2.00 V/V  
±0.3%  
±0.5%  
±0.7%  
Gain Error(3)  
No load, with respect to nominal gain of  
2.00 V/V, TA = –40°C to +85°C  
±0.3%  
0.3%  
RL = 50 , with respect to nominal gain  
of 2.00 V/V  
Gain Error  
VIN = 0 V  
1
1
±14  
VIO  
Output Offset Voltage(3)  
Average Drift  
mV  
µV/°C  
µA  
VIN = 0 V, TA = –40°C to +85°C  
±17.5  
DVIO  
IBN  
27  
VIN = 0 V  
1.4  
1.4  
7
±5.0  
±5.6  
Input Bias Current(3)(4)  
Average Drift  
VIN = 0 V, TA = –40°C to +85°C  
DIBN  
PSRR  
nA/°C  
dB  
DC, Input referred  
50  
48  
20  
20  
54  
Power Supply Rejection Ratio(3)  
DC, Input referred, TA = –40°C to +85°C  
No load  
54  
23  
25  
28.5  
2.2  
ICC  
Supply Current(3)  
mA  
No load, TA = –40°C to +85°C  
No load  
23  
2.0  
2.0  
Supply Current Disabled(3)  
Logic High Threshold(3)  
mA  
V
No load, TA = –40°C to +85°C  
Select and Enable Pins  
2.3  
VIH  
2.0  
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very  
limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under  
conditions of internal self heating where TJ > TA. See the Power Dissipation section for information on temperature de-rating of this  
device. Minimum and maximum ratings are based on product testing, characterization and simulation. Individual parameters are tested  
as noted.  
(2) Parameters ensured by design.  
(3) Parameters ensured by electrical testing at 25° C.  
(4) Positive Value is current into device.  
Copyright © 2005–2018, Texas Instruments Incorporated  
5

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