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LM5110-3M

更新时间： 2025-08-01 12:09:47
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18页 876K
描述
LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability

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LM5110-3M 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP,针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.22
内置保护：UNDER VOLTAGE接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
长度：4.902 mm湿度敏感等级：1
功能数量：2端子数量：8
最高工作温度：125 °C最低工作温度：-40 °C
输出电流流向：SOURCE AND SINK标称输出峰值电流：5 A
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：235认证状态：Not Qualified
座面最大高度：1.753 mm最大供电电压：14 V
最小供电电压：3.5 V标称供电电压：12 V
表面贴装：YES温度等级：AUTOMOTIVE
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED断开时间：0.04 µs
接通时间：0.04 µs宽度：3.9 mm
Base Number Matches：1

LM5110-3M 数据手册

 浏览型号LM5110-3M的Datasheet PDF文件第2页浏览型号LM5110-3M的Datasheet PDF文件第3页浏览型号LM5110-3M的Datasheet PDF文件第4页浏览型号LM5110-3M的Datasheet PDF文件第5页浏览型号LM5110-3M的Datasheet PDF文件第6页浏览型号LM5110-3M的Datasheet PDF文件第7页 
LM5110  
www.ti.com  
SNVS255A –MAY 2004–REVISED MAY 2004  
LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability  
Check for Samples: LM5110  
1
FEATURES  
PACKAGE  
2
•
Independently Drives Two N-Channel  
MOSFETs  
•
•
SOIC-8  
WSON-10 (4 mm x 4 mm)  
•
Compound CMOS and Bipolar Outputs Reduce  
Output Current Variation  
DESCRIPTION  
The LM5110 Dual Gate Driver replaces industry  
standard gate drivers with improved peak output  
current and efficiency. Each “compound” output driver  
stage includes MOS and bipolar transistors operating  
in parallel that together sink more than 5A peak from  
•
•
5A sink/3A Source Current Capability  
Two Channels can be Connected in Parallel to  
Double the Drive Current  
•
•
•
Independent Inputs (TTL Compatible)  
Fast Propagation Times (25 ns Typical)  
capacitive  
loads.  
Combining  
the  
unique  
characteristics of MOS and bipolar devices reduces  
drive current variation with voltage and temperature.  
Separate input and output ground pins provide  
Negative Drive Capability allowing the user to drive  
MOSFET gates with positive and negative VGS  
voltages. The gate driver control inputs are  
referenced to a dedicated input ground (IN_REF).  
The gate driver outputs swing from VCC to the output  
ground VEE which can be negative with respect to  
IN_REF. The ability to hold MOSFET gates off with a  
negative VGS voltage reduces losses when driving  
low threshold voltage MOSFETs often used as  
Fast Rise and Fall Times (14 ns/12 ns Rise/Fall  
with 2 nF Load)  
•
•
•
Dedicated Input Ground Pin (IN_REF) for Split  
Supply or Single Supply Operation  
Outputs Swing from VCC to VEE which can be  
Negative Relative to Input Ground  
Available in Dual Non-inverting, Dual Inverting  
and Combination Configurations  
•
•
•
Shutdown Input Provides Low Power Mode  
Supply Rail Under-voltage Lockout Protection  
synchronous  
rectifiers.  
When  
driving  
with  
Pin-out Compatible with Industry Standard  
Gate Drivers  
conventional positive only gate voltage, the IN_REF  
and VEE pins are connected together and referenced  
to  
a
common ground. Under-voltage lockout  
shutdown input pin are also  
TYPICAL APPLICATIONS  
protection and  
a
provided. The drivers can be operated in parallel with  
inputs and outputs connected to double the drive  
current capability. This device is available in the  
SOIC-8 and the thermally-enhanced WSON-10  
packages.  
•
•
•
•
Synchronous Rectifier Gate Drivers  
Switch-mode Power Supply Gate Driver  
Solenoid and Motor Drivers  
Power Level Shifter  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2004, Texas Instruments Incorporated  
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LM5110-3M 替代型号

型号 品牌 替代类型 描述 数据表
LM5110-3M/NOPB TI

完全替代

 5-A/3-A dual channel gate driver with 4-V UVLO, dedicated input ground, and shutdown input
LM5110-3MX/NOPB TI

完全替代

 5-A/3-A dual channel gate driver with 4-V UVLO, dedicated input ground, and shutdown input

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LM5110-3SD/NOPB NSC

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