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LL4448 PDF预览

LL4448

更新时间: 2024-01-01 05:10:26
品牌 Logo 应用领域
鲁光 - LGE 二极管开关
页数 文件大小 规格书
2页 264K
描述
Fast Switching Surface Mount Diode

LL4448 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:unknown风险等级:5.65
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
元件数量:1最高工作温度:200 °C
最大输出电流:0.15 A最大重复峰值反向电压:100 V
最大反向恢复时间:0.008 µs子类别:Rectifier Diodes
表面贴装:YESBase Number Matches:1

LL4448 数据手册

 浏览型号LL4448的Datasheet PDF文件第2页 
LL4148/LL4448  
Fast Switching Surface Mount Diode  
MINI MELF  
Features  
—
—
Fast Switching Speed  
Surface Mount Package Ideally Suited for  
Automatic Insertion  
General Purpose Rectification  
Silicon Epitaxial Planar Construction  
—
—
Mechanical Data  
Case: MiniMELF  
Dimension in millimeters  
—
—
Polarity: Cathode Band  
Marking: Cathode Band Only  
Weight: 0.12 grams (approx.)  
—
—
Maximum Ratings and Electrical Characteristics  
Rating at 25oC ambient temperature unless otherwise specified.  
Maximum Ratings  
Characteristic  
Symbol  
LL4148  
LL4448  
Unit  
VRM  
Non-Repetitive Peak Reverse Voltage  
100  
75  
V
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
VR(RMS)  
IFM  
RMS Reverse Voltage  
53  
V
Forward Continuous Current (Note 1)  
Average Rectified Output Current (Note 1)  
300  
500  
mA  
mA  
IO  
150  
Non-Repetitive Peak Forward Surge Current @ t = 1.0s  
1.0  
2.0  
IFSM  
Pd  
A
@ t = 1.0ms  
Power Dissipation (Note 1)  
500  
1.68  
mW  
mW/°C  
Derate Above 25°C  
RqJA  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
300  
K/W  
Tj , TSTG  
-65 to +175  
°C  
Electrical Characteristics  
Characteristic  
Symbol  
VFM  
Min  
Max  
Unit  
Test Condition  
IF = 10mA  
IF = 5.0mA  
IF = 100mA  
Maximum Forward Voltage  
LL4148  
LL4448  
LL4448  
¾
0.62  
¾
1.0  
0.72  
1.0  
V
VR = 75V  
5.0  
50  
30  
25  
mA  
mA  
mA  
nA  
VR = 70V, Tj = 150°C  
VR = 20V, Tj = 150°C  
VR = 20V  
IRM  
Maximum Peak Reverse Current  
¾
V
R = 0, f = 1.0MHz  
Cj  
trr  
Capacitance  
¾
¾
4.0  
4.0  
pF  
ns  
IF = 10mA to IR =1.0mA  
VR = 6.0V, RL = 100W  
Reverse Recovery Time  
Notes: 1. Valid provided that device terminals are kept at ambient temperature.  
http://www.luguang.cn  
mail:lge@luguang.cn  

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