Datasheet > LIMN10T1G_15

LIMN10T1G_15

更新时间： 2025-09-07 01:13:11

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	174K
描述
Switching Diode

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中文翻译

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数据手册

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LIMN10T1G_15 数据手册

LESHAN RADIO COMPANY, LTD.

Switching Diode

!Applications

LIMN10T1G

S-LIMN10T1G

Ultra high speed switching

!Features

1) Multiple diodes in one small surface mount package.

2) Diode characteristics are matched in the package.

3) Pb−Free Package is Available.

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

TSOP-6

!Construction

Silicon epitaxial planar

Device Marking Ordering Information

Device

Marking

Shipping

LIMN10T1G

S-LIMN10T1G

N10

3000 Tape&Reel

LIMN10T3G

S-LIMN10T3G

N10

10000 Tape&Reel

!Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

V_RM

V_R

Limits

Unit

Peak reverse voltage

DC reverse voltage

Peak forward current

Mean rectifying current

Surge current (1us)

Power dissipation (total)

Junction temperature

Storage temperature

I _FM

300

100

I _O

I_surge

∗

°C

300

150

T_stg

– 55 ~ +150

°C

∗1 Not to exceed 200mW per element.

!Electrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

–

Typ.

Max.

1.2

0.1

3.5

Unit

Conditions

I _F=100mA

Forward voltage

V_F

I_R

C_T

t_rr

–

Reverse current

–

µA

V_R=70V

Capacitance between terminals

Reverse recovery time

–

V_R=6V , f=1MHz

V_R=6V , I_F=5mA

–

Rev.O 1/3

12 3

中文翻译

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