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LH28F800BGB-TL12 PDF预览

LH28F800BGB-TL12

更新时间： 2024-02-20 05:49:26
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夏普 - SHARP 闪存
页数 文件大小 规格书
43页 274K
描述
8 M-bit (512 kB x 16) SmartVoltage Flash Memories

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LH28F800BGB-TL12 数据手册

 浏览型号LH28F800BGB-TL12的Datasheet PDF文件第2页浏览型号LH28F800BGB-TL12的Datasheet PDF文件第3页浏览型号LH28F800BGB-TL12的Datasheet PDF文件第4页浏览型号LH28F800BGB-TL12的Datasheet PDF文件第5页浏览型号LH28F800BGB-TL12的Datasheet PDF文件第6页浏览型号LH28F800BGB-TL12的Datasheet PDF文件第7页 
LH28F800BG-L/BGH-L (FOR TSOP, CSP)  
8 M-bit (512 kB x 16) SmartVoltage  
Flash Memories  
LH28F800BG-L/BGH-L  
(FOR TSOP, CSP)  
DESCRIPTION  
• Enhanced data protection features  
– Absolute protection with VPP = GND  
– Block erase/word write lockout during power  
transitions  
The LH28F800BG-L/BGH-L flash memories with  
SmartVoltage technology are high-density, low-cost,  
nonvolatile, read/write storage solution for a wide  
range of applications. The LH28F800BG-L/BGH-L  
can operate at VCC = 2.7 V and VPP = 2.7 V. Their  
low voltage operation capability realizes longer  
battery life and suits for cellular phone application.  
Their boot, parameter and main-blocked  
architecture, flexible voltage and enhanced cycling  
capability provide for highly flexible component  
suitable for portable terminals and personal  
computers. Their enhanced suspend capabilities  
provide for an ideal solution for code + data storage  
applications. For secure code storage applications,  
such as networking, where code is either directly  
executed out of flash or downloaded to DRAM, the  
LH28F800BG-L/BGH-L offer two levels of protection  
: absolute protection with VPP at GND, selective  
hardware boot block locking. These alternatives  
give designers ultimate control of their code security  
needs.  
– Boot blocks protection with WP# = VIL  
• SRAM-compatible write interface  
• Optimized array blocking architecture  
– Two 4 k-word boot blocks  
– Six 4 k-word parameter blocks  
– Fifteen 32 k-word main blocks  
– Top or bottom boot location  
• Enhanced cycling capability  
– 100 000 block erase cycles  
• Low power management  
– Deep power-down mode  
– Automatic power saving mode decreases ICC  
in static mode  
• Automated word write and block erase  
– Command user interface  
– Status register  
• ETOXTM V nonvolatile flash technology  
• Packages  
– 48-pin TSOP Type I (TSOP048-P-1220)  
Normal bend/Reverse bend  
FEATURES  
• SmartVoltage technology  
– 48-ball CSP (FBGA048-P-0808)  
– 2.7 V, 3.3 V or 5 V VCC  
– 2.7 V, 3.3 V, 5 V or 12 V VPP  
• High performance read access time  
LH28F800BG-L85/BGH-L85  
ETOX is a trademark of Intel Corporation.  
– 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)/  
100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V)  
LH28F800BG-L12/BGH-L12  
– 120 ns (5.0±0.5 V)/130 ns (3.3±0.3 V)/  
150 ns (2.7 to 3.6 V)  
• Enhanced automated suspend options  
– Word write suspend to read  
– Block erase suspend to word write  
– Block erase suspend to read  
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,  
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.  
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