Datasheet > LC322271T-80

LC322271T-80

更新时间： 2024-09-24 22:35:23

品牌	Logo	应用领域
三洋 - SANYO		动态存储器
页数	文件大小	规格书
29页	1147K
描述
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write

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数据手册

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LC322271T-80 数据手册

Ordering number : EN*5085A

CMOS LSI

LC322271J, M, T-70/80

2 MEG (131072 words × 16 bits) DRAM

Fast Page Mode, Byte Write

Preliminary

Overview

The LC322271J, M and T is a CMOS dynamic RAM

operating on a single 5 V power source and having a

131072 words × 16 bits configuration. Equipped with

large capacity capabilities, high speed transfer rates and

low power dissipation, this series is suited for a wide

variety of applications ranging from computer main

memory and expansion memory to commercial

equipment.

• Package:

SOJ 40-pin (400 mil) plastic package : LC322271J

SOP 40-pin (450 mil) plastic package: LC322271M

TSOP 44-pin (400 mil) plastic package : LC322271T

Package Dimensions

unit: mm

3200-SOJ40

[LC322271J]

Address input utilizes a multiplexed address bus which

permits it to be enclosed in a compact plastic package of

SOJ 40-pin, SOP 40-pin, and TSOP 44-pin . Refresh rates

are within 8 ms with 512 row address (A0 to A7, A8R)

selection and support Row Address Strobe (RAS)-only

refresh, Column Address Strobe (CAS)-before-RAS

refresh and hidden refresh settings. There are functions

such as fast page mode, read-modify-write and byte write.

The pin assignment follows the JEDEC 1 M DRAM

(65536 words × 16 bits, 1CAS/2WE) standard.

Features

• 131072 words × 16 bits configuration.

• Single 5 V ± 10% power supply.

SANYO: SOJ40

• All input and output (I/O) TTL compatible.

• Supports fast page mode, read-modify-write and byte

write.

• Supports output buffer control using early write and

Output Enable (OE) control.

• 8 ms refresh using 512 refresh cycles.

• Supports RAS-only refresh, CAS-before-RAS refresh

and hidden refresh.

• Follows the JEDEC 1 M DRAM (65536 words × 16

bits, 1CAS/2WE) standard.

• RAS access time/column address time/CAS access

time/cycle time/power dissipation

LC322271J, M, T

Parameter

-70

70 ns

-80

80 ns

RAS access time

Column address access time

CAS access time

Cycle time

35 ns

45 ns

20 ns

30 ns

130 ns

688 mW

150 ns

633 mW

During operation

Power dissipation (max.)

During standby

5.5 mW (CMOS level)/11 mW (TTL level)

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-0005 JAPAN

32896HA (OT)/33195TH (OT) No. 5085-1/29

12 3 4 5 6 7...29

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