Datasheet > LBAS316T1G

LBAS316T1G

更新时间： 2024-11-24 01:12:43

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
4页	236K
描述
High-speed diode

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LBAS316T1G 数据手册

LESHAN RADIO COMPANY, LTD.

High-speed diode

LBAS316T1G

S-LBAS316T1G

DESCRIPTION

The LBAS316T1 is a high-speed switching diode fabricated in

planar technology, and encapsulated in the SOD323(SC76) SMD

plastic package.

FEATURES

· Ultra small plastic SMD package

· High switching speed: max. 4 ns

· Continuous reverse voltage: max. 75 V

· Repetitive peak reverse voltage: max. 100 V

· Repetitive peak forward current: max. 500 mA.

SOD– 323

We declare that the material of product compliance with RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring Unique Site and

Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

CATHODE

ANODE

APPLICATIONS

· High-speed switching in e.g. surface mounted circuits.

ORDERING INFORMATION

Device

Marking

Shipping

LBAS316T1G

3000 Tape & Reel

S-LBAS316T1G

10000 Tape & Reel

LBAS316T3G

S-LBAS316T3G

ELECTRICAL CHARACTERISTICS T _j=25°C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

see Fig.2 I _F= 1 mA

I _F= 10 mA

MAX.

715

855

UNIT

V _F

forward voltage

I _F=50 mA

I _F= 150 mA

1.25

I _R

reverse current

see Fig.4 V _R= 25 V

V _R=75 V

µA

V _R= 25 V; T _j= 150 °C

V _R= 75 V; T _j= 150 °C;

f = 1 MHz; V _R= 0; see Fig.5

C _d

t _rr

diode capacitance

reverse recovery time

whenswitchedfromI_F=10mA to I_R=10mA;

R _L= 100 Ω; measured at I _R= 1 mA; see Fig.6

V _frforward recovery voltage

when switched from IF = 10 mA; tr = 20 ns; see Fig.7

1.75

Rev.O 1/4

12 3 4

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