LESHAN RADIO COMPANY, LTD.
High-speed diode
LBAS316T1G
S-LBAS316T1G
DESCRIPTION
The LBAS316T1 is a high-speed switching diode fabricated in
1
planar technology, and encapsulated in the SOD323(SC76) SMD
plastic package.
FEATURES
2
· Ultra small plastic SMD package
· High switching speed: max. 4 ns
· Continuous reverse voltage: max. 75 V
· Repetitive peak reverse voltage: max. 100 V
· Repetitive peak forward current: max. 500 mA.
SOD– 323
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
·
·
1
2
CATHODE
ANODE
APPLICATIONS
· High-speed switching in e.g. surface mounted circuits.
ORDERING INFORMATION
Device
Marking
Shipping
LBAS316T1G
Z9
3000 Tape & Reel
S-LBAS316T1G
10000 Tape & Reel
LBAS316T3G
Z9
S-LBAS316T3G
ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
see Fig.2 I F = 1 mA
I F = 10 mA
MAX.
715
855
1
UNIT
V F
forward voltage
mV
mV
V
I F =50 mA
I F = 150 mA
1.25
30
1
V
I R
reverse current
see Fig.4 V R = 25 V
V R =75 V
nA
µA
µA
µA
pF
ns
V R = 25 V; T j = 150 °C
30
50
2
V R = 75 V; T j = 150 °C;
f = 1 MHz; V R = 0; see Fig.5
C d
t rr
diode capacitance
reverse recovery time
whenswitchedfromIF =10mA to IR =10mA;
4
R L = 100 Ω; measured at I R = 1 mA; see Fig.6
V fr forward recovery voltage
when switched from IF = 10 mA; tr = 20 ns; see Fig.7
1.75
V
Rev.O 1/4