Datasheet > L412

L412

更新时间： 2024-09-30 22:31:47

品牌	Logo	应用领域
IXYS		高压
页数	文件大小	规格书
4页	93K
描述
High Voltage BIMOSFET

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中文翻译

获取价格

数据手册

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L412 数据手册

AdvancedTechnicalInformation

I_C25

= 7 A

HighVoltage

IXBF 9N140

IXBF 9N160

BIMOSFET^TM

in High Voltage

V_CES= 1400/1600 V

V_CE(sat)= 4.9V

t_f

ISOPLUSi4-PAC^TM

= 40 ns

Monolithic Bipolar MOS Transistor

Features

IGBT

• HighVoltageBIMOSFET^TM

- substitute for high voltage MOSFETs

with significantly lower voltage drop

- fast switching for high frequency

operation

Symbol

V_CES

Conditions

MaximumRatings

T_VJ= 25°C to 150°C

IXBF 9N140

IXBF9N160

1400

1600

V_GES

- reverse conduction capability

• ISOPLUS i4-PAC^TM

I_C25

I_C90

T_C= 25°C

T_C= 90°C

highvoltagepackage

- isolated back surface

15/0

I_CM

V_CEK

V_GE

V; R = 100 W; T_VJ= 125°C

0.8V_CES

RBSOA, Clamp^Ged inductive load; L = 100 µH

- enlarged creepage towards heatsink

-enlargedcreepagebetweenhigh

voltage pins

-applicationfriendlypinout

-highreliability

P_tot

T_C= 25°C

- industry standard outline

Symbol

Conditions

CharacteristicValues

(T_VJ= 25°C, unless otherwise specified)

min.

typ. max.

Applications

V_CE(sat)

I_C= 5 A; V_GE= 15 V; T_VJ= 25°C

T_VJ= 125°C

4.9

5.6

• switched mode power supplies

• DC-DC converters

• resonant converters

• lampballasts

• laser generators, x ray generators

V_GE(th)

I_CES

I_C= 0.5 mA; V_GE= V_CE

V_CE= 0.8V_CES;V_GE= 0 V; T_VJ= 25°C

T_VJ= 125°C

0.1 mA

0.1

I_GES

V_CE= 0 V; V_GE

20 V

500 nA

t_d(on)

t_r

t_d(off)

t_f

200

180

Inductive load, T_VJ= 125°C

V_CE= 960 V; I_C= 5 A

15/0

V_GE

V; R_G= 100 W

C_ies

Q_Gon

V_CE= 25 V; V_GE= 0 V; f = 1 MHz

V_CE= 600V; V_GE= 15 V; I_C= 7 A

550

V_F

(reverse conduction); I_F= 5 A

3.6

R_thJC

1.75 K/W

IXYS reserves the right to change limits, test conditions and dimensions.

1 - 4

12 3 4

中文翻译

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