Datasheet > L033C90VE

L033C90VE

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
超微 - AMD		/
页数	文件大小	规格书
49页	1013K
描述
32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory

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L033C90VE 数据手册

D A T A S H E E T

ERASE AND PROGRAMMING PERFORMANCE

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

Chip Erase Time

0.7

Excludes 00h programming

prior to erasure (Note 4)

Byte Programming Time

Accelerated Byte Program Time

Chip Programming Time (Note 3)

Notes:

300

210

108

µs

Excludes system level

overhead (Note 5)

1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V_CC,1,000,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90°C, V_CC= 2.7 V, 1,000,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes

program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the four- or two-bus-cycle sequence for the program command. See

Table 9, on page 25 for further information on command definitions.

6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.

LATCHUP CHARACTERISTICS

Description

Min

Max

Input voltage with respect to V_SSon all pins except I/O pins

(including A9, OE#, and RESET#)

–1.0 V

12.5 V

Input voltage with respect to V_SSon all I/O pins

V_CCCurrent

–1.0 V

V_CC+ 1.0 V

+100 mA

–100 mA

Includes all pins except V_CC. Test conditions: V_CC= 3.0 V, one pin at a time.

TSOP PIN CAPACITANCE

Parameter

Symbol

Parameter Description

Input Capacitance

Test Setup

V_IN= 0

Typ

Max

7.5

Unit

C_IN

C_OUT

C_IN2

Output Capacitance

Control Pin Capacitance

V_OUT= 0

V_IN= 0

8.5

7.5

Notes:

1. Sampled, not 100% tested.

2. Test conditions T_A= 25°C, f = 1.0 MHz.

DATA RETENTION

Parameter

Test Conditions

Min

Unit

Years

150°C

125°C

Minimum Pattern Data Retention Time

Am29LV033C

22268B5 September 12, 2006

1...41 42 434445 46 47...49

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