是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CYLINDRICAL, O-PBCY-T3 | Reach Compliance Code: | compliant |
风险等级: | 5.69 | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 160 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KTD863G-O-T9N-B | UTC |
获取价格 |
Small Signal Bipolar Transistor, |
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KTD863G-O-T9N-K | UTC |
获取价格 |
TRIPLE DIFFUSED NPN TRANSISTOR |
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KTD863G-X-T9N-B | UTC |
获取价格 |
TRIPLE DIFFUSED NPN TRANSISTOR |
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KTD863G-X-T9N-K | UTC |
获取价格 |
TRIPLE DIFFUSED NPN TRANSISTOR |
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KTD863G-Y-T9N-B | UTC |
获取价格 |
TRIPLE DIFFUSED NPN TRANSISTOR |
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KTD863G-Y-T9N-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, |
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KTD863L-GR-T9N-B | UTC |
获取价格 |
Small Signal Bipolar Transistor, |
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KTD863L-GR-T9N-K | UTC |
获取价格 |
TRIPLE DIFFUSED NPN TRANSISTOR |
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KTD863L-O-T9N-B | UTC |
获取价格 |
Small Signal Bipolar Transistor, |
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KTD863L-O-T9N-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, |
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