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KST4403L99Z PDF预览

KST4403L99Z

更新时间: 2024-02-27 16:08:52
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
4页 55K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon

KST4403L99Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.77
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):255 ns最大开启时间(吨):35 ns
Base Number Matches:1

KST4403L99Z 数据手册

 浏览型号KST4403L99Z的Datasheet PDF文件第2页浏览型号KST4403L99Z的Datasheet PDF文件第3页浏览型号KST4403L99Z的Datasheet PDF文件第4页 
KST4403  
3
Switching Transistor  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-40  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-40  
V
CEO  
EBO  
-5  
V
I
-600  
350  
150  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Storage Temperature  
C
T
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
* Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Base Cut-off Current  
Test Condition  
Min.  
Max.  
Units  
BV  
I = -0.1mA, I =0  
-40  
-40  
-5  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I = -1.0mA, I =0  
C B  
I = -0.1mA, I =0  
V
E
C
I
I
V
= -35V, V = -0.4V  
-0.1  
-0.1  
µA  
µA  
BEV  
CEX  
CE  
CE  
BE  
Collector Cut-off Current  
V
= -35V, V = -0.4V  
BE  
h
DC Current Gain  
V
V
V
= -1V, I = -0.1mA  
30  
60  
100  
100  
20  
FE  
CE  
CE  
CE  
C
= -1V, I = -1.0mA  
C
= -1V, I = -10mA  
C
*V = -2V, IC= -150mA  
*V = -2V, I = -500mA  
300  
CE  
CE  
C
V
V
(sat)  
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I = -150mA, I = -15mA  
-0.4  
-0.75  
V
V
CE  
C
B
I = -500mA, I = -50mA  
C
B
I = -150mA, I = -15mA  
-0.75  
200  
-0.95  
-1.3  
V
V
BE  
C
B
I = -500mA, I = -50mA  
C
B
f
I = -20mA, V = -10V  
MHz  
T
C
CE  
f=100MHz  
C
V
= -10V, I =0  
8.5  
35  
pF  
ob  
ON  
CB  
E
f=140KHz  
t
t
Turn On Time  
V
= -30V, V = -2V  
ns  
CC  
BE  
I = -150mA, I = -15mA  
C
B1  
Turn Off Time  
V
= -30V, I = -150mA  
255  
ns  
OFF  
CC  
C
I
=I = -15mA  
B1 B2  
* Pulse Test: Pulse Width300µs, Duty Cycle2%  
Marking  
2T  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  

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