Datasheet > KSMU1N80

KSMU1N80

更新时间： 2024-09-24 01:19:03

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
8页	1553K
描述
800V N-Channel MOSFET

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数据手册

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KSMU1N80 数据手册

KSMD1N80 / KSMU1N80

800V N-Channel MOSFET

TO-252

TO-251

Features

•

1.0A, 800V, R

= 20Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 5.5nC)

Low Crss ( typical 2.7pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Kersemi proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

! "

G !

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

KSMD1N80 / KSMU1N8

Units

Drain-Source Voltage

800

1.0

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

0.63

4.0

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

1.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

4.5

V/ns

dv/dt

4.0

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.36

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.78

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

www.kersemi.com

2014-7-16

12 3 4 5 6 7 8

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