KSC1009YBU

更新时间： 2024-01-04 01:13:32

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器
页数	文件大小	规格书
4页	39K
描述
High Voltage Amplifier

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中文翻译

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数据手册

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KSC1009YBU 数据手册

KSC1009

High Voltage Amplifier

•

High Collector-Base Voltage : V

=160V

CBO

Collector Current : I =700mA

Collector Power Dissipation : P =800mW

Complement to KSA709

Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Ratings

160

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

140

CEO

EBO

700

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

800

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

160

140

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I =100µA, I =0

CBO

CEO

EBO

I =10mA, I =0

C B

I =10µA, I =0

=60V, I =0

0.1

400

0.7

1.0

µA

CBO

EBO

Emitter Cut-off Current

=5V, I =0

DC Current Gain

=2V, I =50mA

(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

I =200mA, I =20mA

0.2

0.86

I =200mA, I =20mA

=10V, I =50mA

MHz

=10V, I =0, f=1MHz

Classification

40 ~ 80

70 ~ 140

120 ~ 240

200 ~ 400

Rev. A1, June 2001

12 3 4

中文翻译

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