5秒后页面跳转
KSC1009YD26Z PDF预览

KSC1009YD26Z

更新时间: 2024-02-24 02:18:22
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
3页 676K
描述
Small Signal Bipolar Transistor, 0.7A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

KSC1009YD26Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.75
最大集电极电流 (IC):0.7 A集电极-发射极最大电压:140 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

KSC1009YD26Z 数据手册

 浏览型号KSC1009YD26Z的Datasheet PDF文件第2页浏览型号KSC1009YD26Z的Datasheet PDF文件第3页 
KSC1009  
NPN EPITAXIAL SILICON TRANSISTOR  
HIGH VOLTAGE AMPLIFIER  
· High Collector-Base Voltage: VCBO=160V  
· Collector Current: IC=700mA  
TO-92  
· Collector Dissipation: PC=800mW  
· Complement to KSA709  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
VCBO  
160  
140  
8
700  
800  
V
V
V
mA  
mW  
°C  
°C  
VCEO  
VEBO  
IC  
PC  
TJ  
150  
-55 ~ 150  
TSTG  
1. Emitter 2. Base 3. Collector  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
V
V
mA  
mA  
IC=100mA, IE=0  
IC=10mA, IB=0  
IE=10mA, IC=0  
VCB=60V, IE=0  
VEB=5V, IC=0  
VCE=2V, IC=50mA  
IC=200mA, IB=20mA  
IC=200mA, IB=20mA  
VCE=10V, IC=50mA  
VCB=10V, IE=0  
f=1MHz  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current (Continuous)  
Emitter Cut-off Current  
BVCBO  
160  
140  
8
BVCEO  
BVEBO  
ICBO  
IEBO  
hFE  
VCE (sat)  
VBE (sat)  
fT  
0.1  
0.1  
400  
0.7  
1.0  
DC Current Gain  
40  
30  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain-Bandwidth Product  
Output Capacitance  
V
V
MHz  
pF  
0.2  
0.86  
50  
COB  
8
hFE CLASSIFICATION  
Classification  
R
O
Y
G
hFE  
40-80  
70-140  
120-240  
200-400  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

与KSC1009YD26Z相关器件

型号 品牌 获取价格 描述 数据表
KSC1009YD27Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.7A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
KSC1009YD75Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.7A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
KSC1009YTA FAIRCHILD

获取价格

High Voltage Amplifier
KSC1009YTA ONSEMI

获取价格

NPN外延硅晶体管
KSC1009YTA_NL FAIRCHILD

获取价格

High Voltage Amplifier
KSC10150SHLFS CK-COMPONENTS

获取价格

Sealed Tact Switch for SMT
KSC101G50LFG CK-COMPONENTS

获取价格

Sealed Tact Switch for SMT
KSC101G50LFS CK-COMPONENTS

获取价格

Sealed Tact Switch for SMT
KSC101G50SHLFG ITT

获取价格

Sealed Tact Switch for SMT
KSC101G50SHLFS ITT

获取价格

Sealed Tact Switch for SMT